Simulation methodology for 2D random network of CNTs field-effect transistors

Min Kyu Joo, Mireille Mouis, Gyu-Tae Kim, Un Jeong Kim, Gerard Ghibaudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (ld) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (Rsd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.

Original languageEnglish
Title of host publicationULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
Pages197-200
Number of pages4
DOIs
Publication statusPublished - 2013 Jul 23
Event14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom
Duration: 2013 Mar 192013 Mar 21

Other

Other14th International Conference on Ultimate Integration on Silicon, ULIS 2013
CountryUnited Kingdom
CityCoventry
Period13/3/1913/3/21

Fingerprint

Field effect transistors
Carbon nanotubes
Circuit simulation
SPICE
Geometry

Keywords

  • Carbon nanotube (CNT)
  • percolation theory
  • sensor applications
  • SPICE simulation

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Joo, M. K., Mouis, M., Kim, G-T., Kim, U. J., & Ghibaudo, G. (2013). Simulation methodology for 2D random network of CNTs field-effect transistors. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' (pp. 197-200). [6523518] https://doi.org/10.1109/ULIS.2013.6523518

Simulation methodology for 2D random network of CNTs field-effect transistors. / Joo, Min Kyu; Mouis, Mireille; Kim, Gyu-Tae; Kim, Un Jeong; Ghibaudo, Gerard.

ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 197-200 6523518.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Joo, MK, Mouis, M, Kim, G-T, Kim, UJ & Ghibaudo, G 2013, Simulation methodology for 2D random network of CNTs field-effect transistors. in ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'., 6523518, pp. 197-200, 14th International Conference on Ultimate Integration on Silicon, ULIS 2013, Coventry, United Kingdom, 13/3/19. https://doi.org/10.1109/ULIS.2013.6523518
Joo MK, Mouis M, Kim G-T, Kim UJ, Ghibaudo G. Simulation methodology for 2D random network of CNTs field-effect transistors. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 197-200. 6523518 https://doi.org/10.1109/ULIS.2013.6523518
Joo, Min Kyu ; Mouis, Mireille ; Kim, Gyu-Tae ; Kim, Un Jeong ; Ghibaudo, Gerard. / Simulation methodology for 2D random network of CNTs field-effect transistors. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. pp. 197-200
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