Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics

Ey Goo Kang, Seung Hyun Moon, Sangsig Kim, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode and cathode electrode. Generally, if the conventional LTIGBT had p+ divert region, the forward blocking voltage of device was decreased greatly because n-drift layer corresponding to punch-through region was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140V. That of the conventional LTIGBT of the same size was no more than 105V. The forward blocking voltage of the proposed LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred late. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original languageEnglish
Title of host publicationIECON Proceedings (Industrial Electronics Conference)
Pages816-819
Number of pages4
Volume2
Publication statusPublished - 2001 Dec 1
Event27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001 - Denver, CO, United States
Duration: 2001 Nov 292001 Dec 2

Other

Other27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001
CountryUnited States
CityDenver, CO
Period01/11/2901/12/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Kang, E. G., Moon, S. H., Kim, S., & Sung, M. Y. (2001). Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics. In IECON Proceedings (Industrial Electronics Conference) (Vol. 2, pp. 816-819)