Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics

Ey Goo Kang, Seung Hyun Moon, Sangsig Kim, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode and cathode electrode. Generally, if the conventional LTIGBT had p+ divert region, the forward blocking voltage of device was decreased greatly because n-drift layer corresponding to punch-through region was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140V. That of the conventional LTIGBT of the same size was no more than 105V. The forward blocking voltage of the proposed LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred late. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original languageEnglish
Title of host publicationIECON Proceedings (Industrial Electronics Conference)
Pages816-819
Number of pages4
Volume2
Publication statusPublished - 2001 Dec 1
Event27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001 - Denver, CO, United States
Duration: 2001 Nov 292001 Dec 2

Other

Other27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001
CountryUnited States
CityDenver, CO
Period01/11/2901/12/2

Fingerprint

Insulated gate bipolar transistors (IGBT)
Cathodes
Electric potential
Electrodes
Oxides
Electric breakdown
Anodes
Current density
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kang, E. G., Moon, S. H., Kim, S., & Sung, M. Y. (2001). Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics. In IECON Proceedings (Industrial Electronics Conference) (Vol. 2, pp. 816-819)

Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics. / Kang, Ey Goo; Moon, Seung Hyun; Kim, Sangsig; Sung, Man Young.

IECON Proceedings (Industrial Electronics Conference). Vol. 2 2001. p. 816-819.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, EG, Moon, SH, Kim, S & Sung, MY 2001, Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics. in IECON Proceedings (Industrial Electronics Conference). vol. 2, pp. 816-819, 27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001, Denver, CO, United States, 01/11/29.
Kang EG, Moon SH, Kim S, Sung MY. Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics. In IECON Proceedings (Industrial Electronics Conference). Vol. 2. 2001. p. 816-819
Kang, Ey Goo ; Moon, Seung Hyun ; Kim, Sangsig ; Sung, Man Young. / Simulation of a lateral trench IGBT with p+ diverter for improving latch-up characteristics. IECON Proceedings (Industrial Electronics Conference). Vol. 2 2001. pp. 816-819
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