Simulation studies of a pixel-type 3-D silicon sensor

Suyong Choi, Jungwhan Goh, Kyungho Ha, Jiwoong Seo, Intae Yu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon sensors with 3-D structures are expected to tolerate radiation levels higher than those of sensors based on normal planar technologies. We studied the performance of a single-sided 3-D silicon pixel-type sensor by using 3-D semiconductor simulation tools. We expect the 3-D silicon detector to have good charge collection efficiency and position resolution.

Original languageEnglish
Pages (from-to)1101-1104
Number of pages4
JournalJournal of the Korean Physical Society
Volume58
Issue number5
DOIs
Publication statusPublished - 2011 May 13

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pixels
sensors
silicon
simulation
detectors
radiation

Keywords

  • 3-D structures
  • Silicon sensor
  • Simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Simulation studies of a pixel-type 3-D silicon sensor. / Choi, Suyong; Goh, Jungwhan; Ha, Kyungho; Seo, Jiwoong; Yu, Intae.

In: Journal of the Korean Physical Society, Vol. 58, No. 5, 13.05.2011, p. 1101-1104.

Research output: Contribution to journalArticle

Choi, Suyong ; Goh, Jungwhan ; Ha, Kyungho ; Seo, Jiwoong ; Yu, Intae. / Simulation studies of a pixel-type 3-D silicon sensor. In: Journal of the Korean Physical Society. 2011 ; Vol. 58, No. 5. pp. 1101-1104.
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