Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology

Jae-Sung Rieh, O. Qasaimeh, L. H. Lu, K. Yang, L. P B Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.

Original languageEnglish
Pages (from-to)63-65
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume8
Issue number2
DOIs
Publication statusPublished - 1998 Feb 1
Externally publishedYes

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Keywords

  • Feedback
  • Fiber optical communication
  • Heterojunction bipolar transistor (HBT)
  • SiGe

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)

Cite this

Rieh, J-S., Qasaimeh, O., Lu, L. H., Yang, K., Katehi, L. P. B., Bhattacharya, P., & Croke, E. T. (1998). Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology. IEEE Microwave and Guided Wave Letters, 8(2), 63-65. https://doi.org/10.1109/75.658642