Single CdTe microwire photodetectors grown by close-spaced sublimation method

Gwangseok Yang, Byung Jae Kim, Donghwan Kim, Ji Hyun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10-3 cm 2 V-1 s-1. Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.

Original languageEnglish
Pages (from-to)18843-18848
Number of pages6
JournalOptics Express
Volume22
Issue number16
DOIs
Publication statusPublished - 2014 Aug 11

    Fingerprint

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this