Single CdTe microwire photodetectors grown by close-spaced sublimation method

Gwangseok Yang, Byung Jae Kim, Donghwan Kim, Ji Hyun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10-3 cm 2 V-1 s-1. Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.

Original languageEnglish
Pages (from-to)18843-18848
Number of pages6
JournalOptics Express
Volume22
Issue number16
DOIs
Publication statusPublished - 2014 Aug 11

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sublimation
photometers
field effect transistors
ultraviolet radiation
transport properties
illumination

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Single CdTe microwire photodetectors grown by close-spaced sublimation method. / Yang, Gwangseok; Kim, Byung Jae; Kim, Donghwan; Kim, Ji Hyun.

In: Optics Express, Vol. 22, No. 16, 11.08.2014, p. 18843-18848.

Research output: Contribution to journalArticle

Yang, Gwangseok ; Kim, Byung Jae ; Kim, Donghwan ; Kim, Ji Hyun. / Single CdTe microwire photodetectors grown by close-spaced sublimation method. In: Optics Express. 2014 ; Vol. 22, No. 16. pp. 18843-18848.
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