We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10-3 cm 2 V-1 s-1. Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics