Single-electron spectroscopy in a coupled triple-dot system: Role of interdot electron-electron interactions

S. Lee, K. Park, J. Park, Jung B. Choi, Sung Ryul Yang

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report on low-temperature single electron tunneling measurements of a coupled triple-dot system with tunable gate fabricated on a silicon-on-insulator structure. Conductance peak positions have been measured as a function of the interdot tunneling constant. We observe one peak at small values of the tunneling constant, and, as the tunneling constant increases, we find that this peak splits into several peaks with uneven spacings. This observed behavior of the conductance peak positions has been modeled by a three-site extended Hubbard model with interdot electron-electron interactions.

Original languageEnglish
Pages (from-to)R7735-R7738
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number12
DOIs
Publication statusPublished - 2000 Jan 1

Fingerprint

Electron-electron interactions
Hubbard model
Electron tunneling
Electron spectroscopy
Silicon
electron spectroscopy
electron scattering
electrons
Temperature
electron tunneling
spacing
insulators
silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Single-electron spectroscopy in a coupled triple-dot system : Role of interdot electron-electron interactions. / Lee, S.; Park, K.; Park, J.; Choi, Jung B.; Yang, Sung Ryul.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 12, 01.01.2000, p. R7735-R7738.

Research output: Contribution to journalArticle

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