Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode

Jaehui Ahn, Michael A. Mastro, Paul B. Klein, Jennifer K. Hite, Boris Feigelson, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto prepatterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure lightemitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.

Original languageEnglish
Pages (from-to)21692-21697
Number of pages6
JournalOptics Express
Volume19
Issue number22
DOIs
Publication statusPublished - 2011 Oct 24

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Ahn, J., Mastro, M. A., Klein, P. B., Hite, J. K., Feigelson, B., Eddy, C. R., & Kim, J. H. (2011). Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode. Optics Express, 19(22), 21692-21697. https://doi.org/10.1364/OE.19.021692