Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode

Jaehui Ahn, Michael A. Mastro, Paul B. Klein, Jennifer K. Hite, Boris Feigelson, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto prepatterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure lightemitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.

Original languageEnglish
Pages (from-to)21692-21697
Number of pages6
JournalOptics Express
Volume19
Issue number22
DOIs
Publication statusPublished - 2011 Oct 24

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electroluminescence
heterojunctions
light emitting diodes
photoluminescence
silicon
thin films
p-n junctions
diodes
electrodes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ahn, J., Mastro, M. A., Klein, P. B., Hite, J. K., Feigelson, B., Eddy, C. R., & Kim, J. H. (2011). Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode. Optics Express, 19(22), 21692-21697. https://doi.org/10.1364/OE.19.021692

Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode. / Ahn, Jaehui; Mastro, Michael A.; Klein, Paul B.; Hite, Jennifer K.; Feigelson, Boris; Eddy, Charles R.; Kim, Ji Hyun.

In: Optics Express, Vol. 19, No. 22, 24.10.2011, p. 21692-21697.

Research output: Contribution to journalArticle

Ahn, J, Mastro, MA, Klein, PB, Hite, JK, Feigelson, B, Eddy, CR & Kim, JH 2011, 'Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode', Optics Express, vol. 19, no. 22, pp. 21692-21697. https://doi.org/10.1364/OE.19.021692
Ahn J, Mastro MA, Klein PB, Hite JK, Feigelson B, Eddy CR et al. Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode. Optics Express. 2011 Oct 24;19(22):21692-21697. https://doi.org/10.1364/OE.19.021692
Ahn, Jaehui ; Mastro, Michael A. ; Klein, Paul B. ; Hite, Jennifer K. ; Feigelson, Boris ; Eddy, Charles R. ; Kim, Ji Hyun. / Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode. In: Optics Express. 2011 ; Vol. 19, No. 22. pp. 21692-21697.
@article{7b267e9c3d2149fb8c4d443f8afc5133,
title = "Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode",
abstract = "The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto prepatterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure lightemitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.",
author = "Jaehui Ahn and Mastro, {Michael A.} and Klein, {Paul B.} and Hite, {Jennifer K.} and Boris Feigelson and Eddy, {Charles R.} and Kim, {Ji Hyun}",
year = "2011",
month = "10",
day = "24",
doi = "10.1364/OE.19.021692",
language = "English",
volume = "19",
pages = "21692--21697",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "22",

}

TY - JOUR

T1 - Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode

AU - Ahn, Jaehui

AU - Mastro, Michael A.

AU - Klein, Paul B.

AU - Hite, Jennifer K.

AU - Feigelson, Boris

AU - Eddy, Charles R.

AU - Kim, Ji Hyun

PY - 2011/10/24

Y1 - 2011/10/24

N2 - The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto prepatterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure lightemitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.

AB - The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto prepatterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure lightemitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.

UR - http://www.scopus.com/inward/record.url?scp=80054903592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054903592&partnerID=8YFLogxK

U2 - 10.1364/OE.19.021692

DO - 10.1364/OE.19.021692

M3 - Article

C2 - 22109019

AN - SCOPUS:80054903592

VL - 19

SP - 21692

EP - 21697

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 22

ER -