Single source precursor-based solvothermal synthesis of heteroatom-doped graphene and its energy storage and conversion applications

Bo Quan, Seung-Ho Yu, Dong Young Chung, Aihua Jin, Ji Hyun Park, Yung Eun Sung, Yuanzhe Piao

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

Solvothermal processes are considered efficient approaches for the gram-scale production of graphene. Further modification of graphene by chemical doping is an important approach to tailor its properties. In this work, we successfully synthesized sulfur-doped graphene by using a solvothermal method with dimethyl sulfoxide as a precursor, which is a common laboratory reagent. Nitrogen-doped graphene was produced to demonstrate the generality of this process. These heteroatom-doped graphene materials exhibited high surface areas and high contents of heteroatoms. Furthermore, the lithium-ion storage properties and oxygen reduction reaction catalytic activity of these materials were also investigated. The success of this approach might facilitate the development of other advanced graphene-based materials with relative simplicity, scalability, and cost effectiveness for use in various potential applications.

Original languageEnglish
Article number5639
JournalScientific Reports
Volume4
DOIs
Publication statusPublished - 2014 Jul 10
Externally publishedYes

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Energy conversion
Energy storage
Cost effectiveness
Dimethyl Sulfoxide
Lithium
Sulfur
Scalability
Catalyst activity
Nitrogen
Doping (additives)
Ions
Oxygen

ASJC Scopus subject areas

  • General

Cite this

Single source precursor-based solvothermal synthesis of heteroatom-doped graphene and its energy storage and conversion applications. / Quan, Bo; Yu, Seung-Ho; Chung, Dong Young; Jin, Aihua; Park, Ji Hyun; Sung, Yung Eun; Piao, Yuanzhe.

In: Scientific Reports, Vol. 4, 5639, 10.07.2014.

Research output: Contribution to journalArticle

Quan, Bo ; Yu, Seung-Ho ; Chung, Dong Young ; Jin, Aihua ; Park, Ji Hyun ; Sung, Yung Eun ; Piao, Yuanzhe. / Single source precursor-based solvothermal synthesis of heteroatom-doped graphene and its energy storage and conversion applications. In: Scientific Reports. 2014 ; Vol. 4.
@article{05047266873d435186de065c9bd19c9c,
title = "Single source precursor-based solvothermal synthesis of heteroatom-doped graphene and its energy storage and conversion applications",
abstract = "Solvothermal processes are considered efficient approaches for the gram-scale production of graphene. Further modification of graphene by chemical doping is an important approach to tailor its properties. In this work, we successfully synthesized sulfur-doped graphene by using a solvothermal method with dimethyl sulfoxide as a precursor, which is a common laboratory reagent. Nitrogen-doped graphene was produced to demonstrate the generality of this process. These heteroatom-doped graphene materials exhibited high surface areas and high contents of heteroatoms. Furthermore, the lithium-ion storage properties and oxygen reduction reaction catalytic activity of these materials were also investigated. The success of this approach might facilitate the development of other advanced graphene-based materials with relative simplicity, scalability, and cost effectiveness for use in various potential applications.",
author = "Bo Quan and Seung-Ho Yu and Chung, {Dong Young} and Aihua Jin and Park, {Ji Hyun} and Sung, {Yung Eun} and Yuanzhe Piao",
year = "2014",
month = "7",
day = "10",
doi = "10.1038/srep05639",
language = "English",
volume = "4",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Single source precursor-based solvothermal synthesis of heteroatom-doped graphene and its energy storage and conversion applications

AU - Quan, Bo

AU - Yu, Seung-Ho

AU - Chung, Dong Young

AU - Jin, Aihua

AU - Park, Ji Hyun

AU - Sung, Yung Eun

AU - Piao, Yuanzhe

PY - 2014/7/10

Y1 - 2014/7/10

N2 - Solvothermal processes are considered efficient approaches for the gram-scale production of graphene. Further modification of graphene by chemical doping is an important approach to tailor its properties. In this work, we successfully synthesized sulfur-doped graphene by using a solvothermal method with dimethyl sulfoxide as a precursor, which is a common laboratory reagent. Nitrogen-doped graphene was produced to demonstrate the generality of this process. These heteroatom-doped graphene materials exhibited high surface areas and high contents of heteroatoms. Furthermore, the lithium-ion storage properties and oxygen reduction reaction catalytic activity of these materials were also investigated. The success of this approach might facilitate the development of other advanced graphene-based materials with relative simplicity, scalability, and cost effectiveness for use in various potential applications.

AB - Solvothermal processes are considered efficient approaches for the gram-scale production of graphene. Further modification of graphene by chemical doping is an important approach to tailor its properties. In this work, we successfully synthesized sulfur-doped graphene by using a solvothermal method with dimethyl sulfoxide as a precursor, which is a common laboratory reagent. Nitrogen-doped graphene was produced to demonstrate the generality of this process. These heteroatom-doped graphene materials exhibited high surface areas and high contents of heteroatoms. Furthermore, the lithium-ion storage properties and oxygen reduction reaction catalytic activity of these materials were also investigated. The success of this approach might facilitate the development of other advanced graphene-based materials with relative simplicity, scalability, and cost effectiveness for use in various potential applications.

UR - http://www.scopus.com/inward/record.url?scp=84904169431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904169431&partnerID=8YFLogxK

U2 - 10.1038/srep05639

DO - 10.1038/srep05639

M3 - Article

VL - 4

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 5639

ER -