Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

Kwangsub Byun, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

Original languageEnglish
Pages (from-to)246-249
Number of pages4
JournalMaterials Chemistry and Physics
Volume122
Issue number1
DOIs
Publication statusPublished - 2010 Jul 1

Fingerprint

Optoelectronic devices
sintering
Sintering
plastics
Plastics
Nanoparticles
nanoparticles
Substrates
Photocurrents
photocurrents
Lighting
illumination
Wavelength
endurance
Bending tests
optoelectronic devices
wavelengths
Durability
cycles
air

Keywords

  • Chalcogenides
  • Optical properties
  • Semiconductors
  • Sintering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates. / Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig.

In: Materials Chemistry and Physics, Vol. 122, No. 1, 01.07.2010, p. 246-249.

Research output: Contribution to journalArticle

@article{b3e4a3a5ddc74a21a100115c6ef7d440,
title = "Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates",
abstract = "The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.",
keywords = "Chalcogenides, Optical properties, Semiconductors, Sintering",
author = "Kwangsub Byun and Kyoungah Cho and Sangsig Kim",
year = "2010",
month = "7",
day = "1",
doi = "10.1016/j.matchemphys.2010.02.043",
language = "English",
volume = "122",
pages = "246--249",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "1",

}

TY - JOUR

T1 - Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

AU - Byun, Kwangsub

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2010/7/1

Y1 - 2010/7/1

N2 - The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

AB - The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

KW - Chalcogenides

KW - Optical properties

KW - Semiconductors

KW - Sintering

UR - http://www.scopus.com/inward/record.url?scp=77950516322&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950516322&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2010.02.043

DO - 10.1016/j.matchemphys.2010.02.043

M3 - Article

VL - 122

SP - 246

EP - 249

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 1

ER -