SiO2 -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate

Yoon Ho Cho, Sang Bu Ha, Dae Soo Jung, Yun Chan Kang, Jong Heun Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effect of SiO2 impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La0.8 Sr0.2 Ga 0.8 Mg0.2 O3-δ, LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO2, while the apparent grain-boundary resistivity was increased up to ∼780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO2. The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number3
DOIs
Publication statusPublished - 2010 Jan 28

Fingerprint

gallates
Lanthanum
lanthanum
Grain boundaries
grain boundaries
conduction
Impurities
impurities
Gadolinium
Cerium compounds
gadolinium
Doping (additives)
electrical resistivity

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

SiO2 -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate. / Cho, Yoon Ho; Ha, Sang Bu; Jung, Dae Soo; Kang, Yun Chan; Lee, Jong Heun.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 3, 28.01.2010.

Research output: Contribution to journalArticle

Cho, Yoon Ho ; Ha, Sang Bu ; Jung, Dae Soo ; Kang, Yun Chan ; Lee, Jong Heun. / SiO2 -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 3.
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