SiO2 -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate

Yoon Ho Cho, Sang Bu Ha, Dae Soo Jung, Yun Chan Kang, Jong Heun Lee

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The effect of SiO2 impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La0.8 Sr0.2 Ga 0.8 Mg0.2 O3-δ, LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO2, while the apparent grain-boundary resistivity was increased up to ∼780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO2. The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.

Original languageEnglish
Pages (from-to)B28-B31
JournalElectrochemical and Solid-State Letters
Volume13
Issue number3
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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