Si+ ion implanted MPS bulk GaN diodes

Y. Irokawa, Ji Hyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.

Original languageEnglish
Pages (from-to)827-830
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number5
DOIs
Publication statusPublished - 2004 May 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Irokawa, Y., Kim, J. H., Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., ... Park, S. S. (2004). Si+ ion implanted MPS bulk GaN diodes. Solid-State Electronics, 48(5), 827-830. https://doi.org/10.1016/j.sse.2003.09.018