The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics