Abstract
The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.
Original language | English |
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Pages (from-to) | 827-830 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 48 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2004 May |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry