Si+ ion implanted MPS bulk GaN diodes

Y. Irokawa, Ji Hyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.

Original languageEnglish
Pages (from-to)827-830
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number5
DOIs
Publication statusPublished - 2004 May 1
Externally publishedYes

Fingerprint

p-i-n diodes
Diodes
diodes
Ions
Schottky diodes
ions
ion implantation
leakage
Ion implantation
Leakage currents
wafers
activation
current density
fabrication
Current density
Chemical activation
electric potential
Fabrication
Electric potential
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Irokawa, Y., Kim, J. H., Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., ... Park, S. S. (2004). Si+ ion implanted MPS bulk GaN diodes. Solid-State Electronics, 48(5), 827-830. https://doi.org/10.1016/j.sse.2003.09.018

Si+ ion implanted MPS bulk GaN diodes. / Irokawa, Y.; Kim, Ji Hyun; Ren, F.; Baik, K. H.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.; Park, S. S.

In: Solid-State Electronics, Vol. 48, No. 5, 01.05.2004, p. 827-830.

Research output: Contribution to journal › Article

Irokawa, Y, Kim, JH, Ren, F, Baik, KH, Gila, BP, Abernathy, CR, Pearton, SJ, Pan, CC, Chen, GT, Chyi, JI & Park, SS 2004, 'Si+ ion implanted MPS bulk GaN diodes', Solid-State Electronics, vol. 48, no. 5, pp. 827-830. https://doi.org/10.1016/j.sse.2003.09.018
Irokawa Y, Kim JH, Ren F, Baik KH, Gila BP, Abernathy CR et al. Si+ ion implanted MPS bulk GaN diodes. Solid-State Electronics. 2004 May 1;48(5):827-830. https://doi.org/10.1016/j.sse.2003.09.018
Irokawa, Y. ; Kim, Ji Hyun ; Ren, F. ; Baik, K. H. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. ; Park, S. S. / Si+ ion implanted MPS bulk GaN diodes. In: Solid-State Electronics. 2004 ; Vol. 48, No. 5. pp. 827-830.
@article{e532b51aaca24c7d9b29b3e60f462242,
title = "Si+ ion implanted MPS bulk GaN diodes",
abstract = "The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25{\%} for 1150 °C anneals, reaching ∼30{\%} for 1200 °C anneals.",
author = "Y. Irokawa and Kim, {Ji Hyun} and F. Ren and Baik, {K. H.} and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Park, {S. S.}",
year = "2004",
month = "5",
day = "1",
doi = "10.1016/j.sse.2003.09.018",
language = "English",
volume = "48",
pages = "827--830",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "5",

}

TY - JOUR

T1 - Si+ ion implanted MPS bulk GaN diodes

AU - Irokawa, Y.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Baik, K. H.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Park, S. S.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.

AB - The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.

UR - http://www.scopus.com/inward/record.url?scp=10744223191&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10744223191&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2003.09.018

DO - 10.1016/j.sse.2003.09.018

M3 - Article

AN - SCOPUS:10744223191

VL - 48

SP - 827

EP - 830

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 5

ER -

Access to Document