Si+ ion implanted MPS bulk GaN diodes

Y. Irokawa, J. Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p-i-n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.

Original languageEnglish
Pages (from-to)827-830
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number5
DOIs
Publication statusPublished - 2004 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Irokawa, Y., Kim, J., Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., Chyi, J. I., & Park, S. S. (2004). Si+ ion implanted MPS bulk GaN diodes. Solid-State Electronics, 48(5), 827-830. https://doi.org/10.1016/j.sse.2003.09.018