Size and relative Co layer thickness dependence of magnetization flop in magnetic tunnel junctions exchange biased by Co/Ru/Co synthetic antiferromagnets

Y. R. Uhm, K. H. Shin, Sang Ho Lim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Computer simulation is used to examine the size and relative Co layer thickness dependence of the magnetization flop in magnetic tunnel junctions with the structure NiFe(I)(7.5nm)/AlO x (0.7nm)/Co(I)(ynm)/Ru(0.7nm)/ Co(II)(7-ynm)/FeMn(10nm). The flop angle, which was obtained at a typical sputtering condition from an energy minimization, increases with the increase of y. The unidirectional pinning reduces the magnetization flop and its effect is greater when the Co thickness difference is smaller due to a larger energy contribution from the pinning term. Magnetoresistance hysteresis loops of "as-sputtered" samples, which were subjected to the magnetization flop, are found to vary significantly with the relative Co layer thickness, the cell size, and the magnitude of the unidirectional pinning.

Original languageEnglish
Pages (from-to)6929-6931
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
Publication statusPublished - 2002 May 15
Externally publishedYes

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tunnel junctions
magnetization
computerized simulation
sputtering
hysteresis
optimization
energy
cells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Size and relative Co layer thickness dependence of magnetization flop in magnetic tunnel junctions exchange biased by Co/Ru/Co synthetic antiferromagnets. / Uhm, Y. R.; Shin, K. H.; Lim, Sang Ho.

In: Journal of Applied Physics, Vol. 91, No. 10 I, 15.05.2002, p. 6929-6931.

Research output: Contribution to journalArticle

@article{516c3bbfed7544039c74507ef99d7266,
title = "Size and relative Co layer thickness dependence of magnetization flop in magnetic tunnel junctions exchange biased by Co/Ru/Co synthetic antiferromagnets",
abstract = "Computer simulation is used to examine the size and relative Co layer thickness dependence of the magnetization flop in magnetic tunnel junctions with the structure NiFe(I)(7.5nm)/AlO x (0.7nm)/Co(I)(ynm)/Ru(0.7nm)/ Co(II)(7-ynm)/FeMn(10nm). The flop angle, which was obtained at a typical sputtering condition from an energy minimization, increases with the increase of y. The unidirectional pinning reduces the magnetization flop and its effect is greater when the Co thickness difference is smaller due to a larger energy contribution from the pinning term. Magnetoresistance hysteresis loops of {"}as-sputtered{"} samples, which were subjected to the magnetization flop, are found to vary significantly with the relative Co layer thickness, the cell size, and the magnitude of the unidirectional pinning.",
author = "Uhm, {Y. R.} and Shin, {K. H.} and Lim, {Sang Ho}",
year = "2002",
month = "5",
day = "15",
doi = "10.1063/1.1452192",
language = "English",
volume = "91",
pages = "6929--6931",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10 I",

}

TY - JOUR

T1 - Size and relative Co layer thickness dependence of magnetization flop in magnetic tunnel junctions exchange biased by Co/Ru/Co synthetic antiferromagnets

AU - Uhm, Y. R.

AU - Shin, K. H.

AU - Lim, Sang Ho

PY - 2002/5/15

Y1 - 2002/5/15

N2 - Computer simulation is used to examine the size and relative Co layer thickness dependence of the magnetization flop in magnetic tunnel junctions with the structure NiFe(I)(7.5nm)/AlO x (0.7nm)/Co(I)(ynm)/Ru(0.7nm)/ Co(II)(7-ynm)/FeMn(10nm). The flop angle, which was obtained at a typical sputtering condition from an energy minimization, increases with the increase of y. The unidirectional pinning reduces the magnetization flop and its effect is greater when the Co thickness difference is smaller due to a larger energy contribution from the pinning term. Magnetoresistance hysteresis loops of "as-sputtered" samples, which were subjected to the magnetization flop, are found to vary significantly with the relative Co layer thickness, the cell size, and the magnitude of the unidirectional pinning.

AB - Computer simulation is used to examine the size and relative Co layer thickness dependence of the magnetization flop in magnetic tunnel junctions with the structure NiFe(I)(7.5nm)/AlO x (0.7nm)/Co(I)(ynm)/Ru(0.7nm)/ Co(II)(7-ynm)/FeMn(10nm). The flop angle, which was obtained at a typical sputtering condition from an energy minimization, increases with the increase of y. The unidirectional pinning reduces the magnetization flop and its effect is greater when the Co thickness difference is smaller due to a larger energy contribution from the pinning term. Magnetoresistance hysteresis loops of "as-sputtered" samples, which were subjected to the magnetization flop, are found to vary significantly with the relative Co layer thickness, the cell size, and the magnitude of the unidirectional pinning.

UR - http://www.scopus.com/inward/record.url?scp=0037095105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037095105&partnerID=8YFLogxK

U2 - 10.1063/1.1452192

DO - 10.1063/1.1452192

M3 - Article

VL - 91

SP - 6929

EP - 6931

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10 I

ER -