Size and relative Co layer thickness dependence of magnetization flop in magnetic tunnel junctions exchange biased by Co/Ru/Co synthetic antiferromagnets

Y. R. Uhm, K. H. Shin, Sang Ho Lim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Computer simulation is used to examine the size and relative Co layer thickness dependence of the magnetization flop in magnetic tunnel junctions with the structure NiFe(I)(7.5nm)/AlO x (0.7nm)/Co(I)(ynm)/Ru(0.7nm)/ Co(II)(7-ynm)/FeMn(10nm). The flop angle, which was obtained at a typical sputtering condition from an energy minimization, increases with the increase of y. The unidirectional pinning reduces the magnetization flop and its effect is greater when the Co thickness difference is smaller due to a larger energy contribution from the pinning term. Magnetoresistance hysteresis loops of "as-sputtered" samples, which were subjected to the magnetization flop, are found to vary significantly with the relative Co layer thickness, the cell size, and the magnitude of the unidirectional pinning.

Original languageEnglish
Pages (from-to)6929-6931
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
Publication statusPublished - 2002 May 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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