Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's

Jae Sung Rieh, Liang Hung Lu, Zhenqiang Ma, Xuefeng Liu, P. B. Katehi, Pallab Bhattacharya

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Common-emitter(CE) and common-base(CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE device show fmax of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and Pout at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.

Original languageEnglish
Pages (from-to)1191-1194
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA
Duration: 1999 Jun 131999 Jun 19

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Rieh, J. S., Lu, L. H., Ma, Z., Liu, X., Katehi, P. B., & Bhattacharya, P. (1999). Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's. IEEE MTT-S International Microwave Symposium Digest, 3, 1191-1194.