Smart gas sensor and noise properties of single ZnO nanowire

Soo Han Choi, Seong Min Yee, Hyun Jin Ji, Jae Wan Choi, Young Seung Cho, Gyu-Tae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new zinc oxide nanowire (NWgas sensor based on the commercially available 0.35mm complementary metal-oxide-semiconductor (CMOSprocess is developed. The smart gas sensor consists of a gas-sensing resistor and an interface circuit for resistance measurement. The single ZnO NW synthesized by the vapor-liquid-solid (VLSprocess is utilized as the gas-sensing resistor. The interface circuit for the resistance measurement of the single ZnO NW is composed of a ring oscillator circuit, in which the oscillation period is optimized with regards to the ZnO NW resistance and external capacitance to accurately detect the resistance of the ZnO NW after exposure to the gas. Because the low-frequency noise contains information about the charge fluctuations which are important for determining the gas-sensing reliability, the low-frequency noise of the single ZnO NW at various gate voltages, source-drain voltages and resistances is systematically characterized and compared with those of CMOS field-effect transistors (FETsand network carbon nanotubes (CNTsresistor.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume48
Issue number6 PART 2
DOIs
Publication statusPublished - 2009 Jun 1

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Smart sensors
Chemical sensors
Nanowires
nanowires
sensors
Gases
gases
Resistors
Networks (circuits)
resistors
CMOS
low frequencies
Electric potential
Field effect transistors
Zinc oxide
electric potential
Carbon nanotubes
Capacitance
zinc oxides
Vapors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Smart gas sensor and noise properties of single ZnO nanowire. / Choi, Soo Han; Yee, Seong Min; Ji, Hyun Jin; Choi, Jae Wan; Cho, Young Seung; Kim, Gyu-Tae.

In: Japanese Journal of Applied Physics, Vol. 48, No. 6 PART 2, 01.06.2009.

Research output: Contribution to journalArticle

Choi, Soo Han ; Yee, Seong Min ; Ji, Hyun Jin ; Choi, Jae Wan ; Cho, Young Seung ; Kim, Gyu-Tae. / Smart gas sensor and noise properties of single ZnO nanowire. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 6 PART 2.
@article{b880de16f6d04b3a95894c26a39de3ac,
title = "Smart gas sensor and noise properties of single ZnO nanowire",
abstract = "A new zinc oxide nanowire (NWgas sensor based on the commercially available 0.35mm complementary metal-oxide-semiconductor (CMOSprocess is developed. The smart gas sensor consists of a gas-sensing resistor and an interface circuit for resistance measurement. The single ZnO NW synthesized by the vapor-liquid-solid (VLSprocess is utilized as the gas-sensing resistor. The interface circuit for the resistance measurement of the single ZnO NW is composed of a ring oscillator circuit, in which the oscillation period is optimized with regards to the ZnO NW resistance and external capacitance to accurately detect the resistance of the ZnO NW after exposure to the gas. Because the low-frequency noise contains information about the charge fluctuations which are important for determining the gas-sensing reliability, the low-frequency noise of the single ZnO NW at various gate voltages, source-drain voltages and resistances is systematically characterized and compared with those of CMOS field-effect transistors (FETsand network carbon nanotubes (CNTsresistor.",
author = "Choi, {Soo Han} and Yee, {Seong Min} and Ji, {Hyun Jin} and Choi, {Jae Wan} and Cho, {Young Seung} and Gyu-Tae Kim",
year = "2009",
month = "6",
day = "1",
doi = "10.1143/JJaP.48.06FD13",
language = "English",
volume = "48",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 PART 2",

}

TY - JOUR

T1 - Smart gas sensor and noise properties of single ZnO nanowire

AU - Choi, Soo Han

AU - Yee, Seong Min

AU - Ji, Hyun Jin

AU - Choi, Jae Wan

AU - Cho, Young Seung

AU - Kim, Gyu-Tae

PY - 2009/6/1

Y1 - 2009/6/1

N2 - A new zinc oxide nanowire (NWgas sensor based on the commercially available 0.35mm complementary metal-oxide-semiconductor (CMOSprocess is developed. The smart gas sensor consists of a gas-sensing resistor and an interface circuit for resistance measurement. The single ZnO NW synthesized by the vapor-liquid-solid (VLSprocess is utilized as the gas-sensing resistor. The interface circuit for the resistance measurement of the single ZnO NW is composed of a ring oscillator circuit, in which the oscillation period is optimized with regards to the ZnO NW resistance and external capacitance to accurately detect the resistance of the ZnO NW after exposure to the gas. Because the low-frequency noise contains information about the charge fluctuations which are important for determining the gas-sensing reliability, the low-frequency noise of the single ZnO NW at various gate voltages, source-drain voltages and resistances is systematically characterized and compared with those of CMOS field-effect transistors (FETsand network carbon nanotubes (CNTsresistor.

AB - A new zinc oxide nanowire (NWgas sensor based on the commercially available 0.35mm complementary metal-oxide-semiconductor (CMOSprocess is developed. The smart gas sensor consists of a gas-sensing resistor and an interface circuit for resistance measurement. The single ZnO NW synthesized by the vapor-liquid-solid (VLSprocess is utilized as the gas-sensing resistor. The interface circuit for the resistance measurement of the single ZnO NW is composed of a ring oscillator circuit, in which the oscillation period is optimized with regards to the ZnO NW resistance and external capacitance to accurately detect the resistance of the ZnO NW after exposure to the gas. Because the low-frequency noise contains information about the charge fluctuations which are important for determining the gas-sensing reliability, the low-frequency noise of the single ZnO NW at various gate voltages, source-drain voltages and resistances is systematically characterized and compared with those of CMOS field-effect transistors (FETsand network carbon nanotubes (CNTsresistor.

UR - http://www.scopus.com/inward/record.url?scp=70249093645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70249093645&partnerID=8YFLogxK

U2 - 10.1143/JJaP.48.06FD13

DO - 10.1143/JJaP.48.06FD13

M3 - Article

AN - SCOPUS:70249093645

VL - 48

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 PART 2

ER -