Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity

Young Dae Ko, Jin Gu Kang, Gwang Hee Lee, Jae Gwan Park, Kyung Soo Park, Yun Ho Jin, Dong-Wan Kim

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).

Original languageEnglish
Pages (from-to)3371-3375
Number of pages5
JournalNanoscale
Volume3
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1
Externally publishedYes

Fingerprint

Germanium
Growth temperature
Lithium
Nanowires
Electrodes
Metals
Strain relaxation
Substrates
Melting point
Heterojunctions
Evaporation
Vapors
Ions
Crystalline materials
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ko, Y. D., Kang, J. G., Lee, G. H., Park, J. G., Park, K. S., Jin, Y. H., & Kim, D-W. (2011). Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity. Nanoscale, 3(8), 3371-3375. https://doi.org/10.1039/c1nr10471c

Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity. / Ko, Young Dae; Kang, Jin Gu; Lee, Gwang Hee; Park, Jae Gwan; Park, Kyung Soo; Jin, Yun Ho; Kim, Dong-Wan.

In: Nanoscale, Vol. 3, No. 8, 01.08.2011, p. 3371-3375.

Research output: Contribution to journalArticle

Ko, Young Dae ; Kang, Jin Gu ; Lee, Gwang Hee ; Park, Jae Gwan ; Park, Kyung Soo ; Jin, Yun Ho ; Kim, Dong-Wan. / Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity. In: Nanoscale. 2011 ; Vol. 3, No. 8. pp. 3371-3375.
@article{7e8ace8b8309435cb244ca58b638575a,
title = "Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity",
abstract = "We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).",
author = "Ko, {Young Dae} and Kang, {Jin Gu} and Lee, {Gwang Hee} and Park, {Jae Gwan} and Park, {Kyung Soo} and Jin, {Yun Ho} and Dong-Wan Kim",
year = "2011",
month = "8",
day = "1",
doi = "10.1039/c1nr10471c",
language = "English",
volume = "3",
pages = "3371--3375",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "8",

}

TY - JOUR

T1 - Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity

AU - Ko, Young Dae

AU - Kang, Jin Gu

AU - Lee, Gwang Hee

AU - Park, Jae Gwan

AU - Park, Kyung Soo

AU - Jin, Yun Ho

AU - Kim, Dong-Wan

PY - 2011/8/1

Y1 - 2011/8/1

N2 - We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).

AB - We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).

UR - http://www.scopus.com/inward/record.url?scp=80051588257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051588257&partnerID=8YFLogxK

U2 - 10.1039/c1nr10471c

DO - 10.1039/c1nr10471c

M3 - Article

C2 - 21750788

AN - SCOPUS:80051588257

VL - 3

SP - 3371

EP - 3375

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 8

ER -