Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity

Young Dae Ko, Jin Gu Kang, Gwang Hee Lee, Jae Gwan Park, Kyung Soo Park, Yun Ho Jin, Dong Wan Kim

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).

Original languageEnglish
Pages (from-to)3371-3375
Number of pages5
JournalNanoscale
Volume3
Issue number8
DOIs
Publication statusPublished - 2011 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

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