Abstract
We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).
| Original language | English |
|---|---|
| Pages (from-to) | 3371-3375 |
| Number of pages | 5 |
| Journal | Nanoscale |
| Volume | 3 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
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Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity. / Ko, Young Dae; Kang, Jin Gu; Lee, Gwang Hee; Park, Jae Gwan; Park, Kyung Soo; Jin, Yun Ho; Kim, Dong-Wan.
In: Nanoscale, Vol. 3, No. 8, 01.08.2011, p. 3371-3375.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity
AU - Ko, Young Dae
AU - Kang, Jin Gu
AU - Lee, Gwang Hee
AU - Park, Jae Gwan
AU - Park, Kyung Soo
AU - Jin, Yun Ho
AU - Kim, Dong-Wan
PY - 2011/8/1
Y1 - 2011/8/1
N2 - We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).
AB - We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g-1 at 1C rate).
UR - http://www.scopus.com/inward/record.url?scp=80051588257&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80051588257&partnerID=8YFLogxK
U2 - 10.1039/c1nr10471c
DO - 10.1039/c1nr10471c
M3 - Article
C2 - 21750788
AN - SCOPUS:80051588257
VL - 3
SP - 3371
EP - 3375
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 8
ER -