SnO2 thin films grown by atomic layer deposition using a novel Sn precursor

Min Jung Choi, Cheol Jin Cho, Kwang Chon Kim, Jung Joon Pyeon, Hyung Ho Park, Hyo Suk Kim, Jeong Hwan Han, Chang Gyoun Kim, Taek Mo Chung, Tae Joo Park, Beomjin Kwon, Doo Seok Jeong, Seung Hyub Baek, Chong-Yun Kang, Jin Sang Kim, Seong Keun Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

SnO2 thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp)2) and O3 in a temperature range of 100-230°C. The ALD window was found to be in the range of 100-200°C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230°C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp)2 precursor. The SnO2 films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn4+ in SnO2. The concentration of carbon and nitrogen in the all SnO2 films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO2 films with respect to the growth temperature. The ALD process with Sn(dmamp)2 and O3 shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp)2 and O3 is promising for growth of robust and highly pure SnO2 films.

Original languageEnglish
Pages (from-to)188-194
Number of pages7
JournalApplied Surface Science
Volume320
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

Fingerprint

Atomic layer deposition
Thin films
Growth temperature
Nitrogen
Carbon
Ions
Tin
Amorphous films
Auger electron spectroscopy
Aspect ratio
Hydrogen
Pyrolysis
Spectroscopy
Impurities
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Choi, M. J., Cho, C. J., Kim, K. C., Pyeon, J. J., Park, H. H., Kim, H. S., ... Kim, S. K. (2014). SnO2 thin films grown by atomic layer deposition using a novel Sn precursor. Applied Surface Science, 320, 188-194. https://doi.org/10.1016/j.apsusc.2014.09.054

SnO2 thin films grown by atomic layer deposition using a novel Sn precursor. / Choi, Min Jung; Cho, Cheol Jin; Kim, Kwang Chon; Pyeon, Jung Joon; Park, Hyung Ho; Kim, Hyo Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek Mo; Park, Tae Joo; Kwon, Beomjin; Jeong, Doo Seok; Baek, Seung Hyub; Kang, Chong-Yun; Kim, Jin Sang; Kim, Seong Keun.

In: Applied Surface Science, Vol. 320, 01.01.2014, p. 188-194.

Research output: Contribution to journalArticle

Choi, MJ, Cho, CJ, Kim, KC, Pyeon, JJ, Park, HH, Kim, HS, Han, JH, Kim, CG, Chung, TM, Park, TJ, Kwon, B, Jeong, DS, Baek, SH, Kang, C-Y, Kim, JS & Kim, SK 2014, 'SnO2 thin films grown by atomic layer deposition using a novel Sn precursor', Applied Surface Science, vol. 320, pp. 188-194. https://doi.org/10.1016/j.apsusc.2014.09.054
Choi, Min Jung ; Cho, Cheol Jin ; Kim, Kwang Chon ; Pyeon, Jung Joon ; Park, Hyung Ho ; Kim, Hyo Suk ; Han, Jeong Hwan ; Kim, Chang Gyoun ; Chung, Taek Mo ; Park, Tae Joo ; Kwon, Beomjin ; Jeong, Doo Seok ; Baek, Seung Hyub ; Kang, Chong-Yun ; Kim, Jin Sang ; Kim, Seong Keun. / SnO2 thin films grown by atomic layer deposition using a novel Sn precursor. In: Applied Surface Science. 2014 ; Vol. 320. pp. 188-194.
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abstract = "SnO2 thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp)2) and O3 in a temperature range of 100-230°C. The ALD window was found to be in the range of 100-200°C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230°C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp)2 precursor. The SnO2 films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn4+ in SnO2. The concentration of carbon and nitrogen in the all SnO2 films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO2 films with respect to the growth temperature. The ALD process with Sn(dmamp)2 and O3 shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp)2 and O3 is promising for growth of robust and highly pure SnO2 films.",
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AU - Choi, Min Jung

AU - Cho, Cheol Jin

AU - Kim, Kwang Chon

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AU - Park, Hyung Ho

AU - Kim, Hyo Suk

AU - Han, Jeong Hwan

AU - Kim, Chang Gyoun

AU - Chung, Taek Mo

AU - Park, Tae Joo

AU - Kwon, Beomjin

AU - Jeong, Doo Seok

AU - Baek, Seung Hyub

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AU - Kim, Jin Sang

AU - Kim, Seong Keun

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N2 - SnO2 thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp)2) and O3 in a temperature range of 100-230°C. The ALD window was found to be in the range of 100-200°C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230°C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp)2 precursor. The SnO2 films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn4+ in SnO2. The concentration of carbon and nitrogen in the all SnO2 films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO2 films with respect to the growth temperature. The ALD process with Sn(dmamp)2 and O3 shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp)2 and O3 is promising for growth of robust and highly pure SnO2 films.

AB - SnO2 thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp)2) and O3 in a temperature range of 100-230°C. The ALD window was found to be in the range of 100-200°C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230°C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp)2 precursor. The SnO2 films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn4+ in SnO2. The concentration of carbon and nitrogen in the all SnO2 films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO2 films with respect to the growth temperature. The ALD process with Sn(dmamp)2 and O3 shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp)2 and O3 is promising for growth of robust and highly pure SnO2 films.

KW - Atomic layer deposition

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KW - Sn(dmamp)

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