Soft reverse current-voltage characteristics in V 2O 5 nanofiber junctions

Gyu-Tae Kim, Jörg Muster, Marko Burghard, Siegmar Roth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

V 2O 5 nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages505-510
Number of pages6
Volume703
Publication statusPublished - 2002
Externally publishedYes
EventNanophase and Nanocomposite Materials IV - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 29

Other

OtherNanophase and Nanocomposite Materials IV
CountryUnited States
CityBoston, MA
Period01/11/2601/11/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kim, G-T., Muster, J., Burghard, M., & Roth, S. (2002). Soft reverse current-voltage characteristics in V 2O 5 nanofiber junctions In Materials Research Society Symposium - Proceedings (Vol. 703, pp. 505-510)