Soft reverse current-voltage characteristics in V2O5 nanofiber junctions

Gyu Tae Kim; Jörg Muster; Marko Burghard; Siegmar Roth

Soft reverse current-voltage characteristics in V₂O₅ nanofiber junctions

Gyu Tae Kim, Jörg Muster, Marko Burghard, Siegmar Roth

Research output: Contribution to journal › Conference article › peer-review

Abstract

V₂O₅ nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.

Original language	English
Pages (from-to)	505-510
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	703
Publication status	Published - 2002
Externally published	Yes
Event	Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{4fa05bec0f0345b9b573a4346d244cc1,

title = "Soft reverse current-voltage characteristics in V2O5 nanofiber junctions",

abstract = "V2O5 nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.",

author = "Kim, {Gyu Tae} and J{\"o}rg Muster and Marko Burghard and Siegmar Roth",

year = "2002",

language = "English",

volume = "703",

pages = "505--510",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Nanophase and Nanocomposite Materials IV ; Conference date: 26-11-2001 Through 29-11-2001",

}

TY - JOUR

T1 - Soft reverse current-voltage characteristics in V2O5 nanofiber junctions

AU - Kim, Gyu Tae

AU - Muster, Jörg

AU - Burghard, Marko

AU - Roth, Siegmar

PY - 2002

Y1 - 2002

N2 - V2O5 nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.

AB - V2O5 nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.

UR - http://www.scopus.com/inward/record.url?scp=0036352464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036352464&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036352464

VL - 703

SP - 505

EP - 510

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

T2 - Nanophase and Nanocomposite Materials IV

Y2 - 26 November 2001 through 29 November 2001

ER -

Soft reverse current-voltage characteristics in V2O5 nanofiber junctions

Abstract

ASJC Scopus subject areas

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Soft reverse current-voltage characteristics in V₂O₅ nanofiber junctions