Abstract
V2O5 nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.
| Original language | English |
|---|---|
| Pages (from-to) | 505-510 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 703 |
| Publication status | Published - 2002 |
| Event | Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 29 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Kim, G. T., Muster, J., Burghard, M., & Roth, S. (2002). Soft reverse current-voltage characteristics in V2O5 nanofiber junctions. Materials Research Society Symposium - Proceedings, 703, 505-510.