Soft reverse current-voltage characteristics in V2O5 nanofiber junctions

Gyu Tae Kim, Jörg Muster, Marko Burghard, Siegmar Roth

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

V2O5 nanofibers showed the rectifying current-voltage characteristics under an asymmetric contact configuration at room temperature, indicating the formation of a Schottky diode. The ideality factors as a Schottky diode were estimated to be 6.1 at the forward bias and 1.4 at the reverse bias. The larger current at the reverse bias defined by the negative voltage at the metal electrode may originate from the contribution of the tunneling via field emission or thermionic field emission. The ultimate geometric size of nanofibers enhances the influence of the tunneling mechanism and modifies the nano-scale Schottky diode, requiring more understanding in designing the nano-scale electronic devices with the metal contacts.

Original languageEnglish
Pages (from-to)505-510
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume703
Publication statusPublished - 2002
EventNanophase and Nanocomposite Materials IV - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Soft reverse current-voltage characteristics in V<sub>2</sub>O<sub>5</sub> nanofiber junctions'. Together they form a unique fingerprint.

  • Cite this