Soft-type trap-induced degradation of MoS2 field effect transistors

Young Hoon Cho, Min Yeul Ryu, Kook Jin Lee, So Jeong Park, Jun Hee Choi, Byung Chul Lee, Wungyeon Kim, Gyu-Tae Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Original languageEnglish
Article number22LT01
JournalNanotechnology
Volume29
Issue number22
DOIs
Publication statusPublished - 2018 Apr 4

Keywords

  • CNFCMF model
  • degradation
  • low frequency noise
  • MoS

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Cho, Y. H., Ryu, M. Y., Lee, K. J., Park, S. J., Choi, J. H., Lee, B. C., Kim, W., & Kim, G-T. (2018). Soft-type trap-induced degradation of MoS2 field effect transistors. Nanotechnology, 29(22), [22LT01]. https://doi.org/10.1088/1361-6528/aab4d3