Soft-type trap-induced degradation of MoS2 field effect transistors

Young Hoon Cho, Min Yeul Ryu, Kook Jin Lee, So Jeong Park, Jun Hee Choi, Byung Chul Lee, Wungyeon Kim, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Original languageEnglish
Article number22LT01
JournalNanotechnology
Volume29
Issue number22
DOIs
Publication statusPublished - 2018 Apr 4

Keywords

  • CNFCMF model
  • MoS
  • degradation
  • low frequency noise

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Soft-type trap-induced degradation of MoS<sub>2</sub> field effect transistors'. Together they form a unique fingerprint.

Cite this