Soft-type trap-induced degradation of MoS2 field effect transistors

Young Hoon Cho, Min Yeul Ryu, Kook Jin Lee, So Jeong Park, Jun Hee Choi, Byung Chul Lee, Wungyeon Kim, Gyu-Tae Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Original languageEnglish
Article number22LT01
JournalNanotechnology
Volume29
Issue number22
DOIs
Publication statusPublished - 2018 Apr 4

Fingerprint

Semiconductors
Drain current
Field effect transistors
Oxides
Noise
Degradation
Equipment and Supplies
Power spectrum
Multilayers
Transistors
Semiconductor materials

Keywords

  • CNFCMF model
  • degradation
  • low frequency noise
  • MoS

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Cho, Y. H., Ryu, M. Y., Lee, K. J., Park, S. J., Choi, J. H., Lee, B. C., ... Kim, G-T. (2018). Soft-type trap-induced degradation of MoS2 field effect transistors. Nanotechnology, 29(22), [22LT01]. https://doi.org/10.1088/1361-6528/aab4d3

Soft-type trap-induced degradation of MoS2 field effect transistors. / Cho, Young Hoon; Ryu, Min Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung Chul; Kim, Wungyeon; Kim, Gyu-Tae.

In: Nanotechnology, Vol. 29, No. 22, 22LT01, 04.04.2018.

Research output: Contribution to journalArticle

Cho, YH, Ryu, MY, Lee, KJ, Park, SJ, Choi, JH, Lee, BC, Kim, W & Kim, G-T 2018, 'Soft-type trap-induced degradation of MoS2 field effect transistors', Nanotechnology, vol. 29, no. 22, 22LT01. https://doi.org/10.1088/1361-6528/aab4d3
Cho YH, Ryu MY, Lee KJ, Park SJ, Choi JH, Lee BC et al. Soft-type trap-induced degradation of MoS2 field effect transistors. Nanotechnology. 2018 Apr 4;29(22). 22LT01. https://doi.org/10.1088/1361-6528/aab4d3
Cho, Young Hoon ; Ryu, Min Yeul ; Lee, Kook Jin ; Park, So Jeong ; Choi, Jun Hee ; Lee, Byung Chul ; Kim, Wungyeon ; Kim, Gyu-Tae. / Soft-type trap-induced degradation of MoS2 field effect transistors. In: Nanotechnology. 2018 ; Vol. 29, No. 22.
@article{de54c5f0df114a90addf4c677eec2e7e,
title = "Soft-type trap-induced degradation of MoS2 field effect transistors",
abstract = "The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56{\%} from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.",
keywords = "CNFCMF model, degradation, low frequency noise, MoS",
author = "Cho, {Young Hoon} and Ryu, {Min Yeul} and Lee, {Kook Jin} and Park, {So Jeong} and Choi, {Jun Hee} and Lee, {Byung Chul} and Wungyeon Kim and Gyu-Tae Kim",
year = "2018",
month = "4",
day = "4",
doi = "10.1088/1361-6528/aab4d3",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "22",

}

TY - JOUR

T1 - Soft-type trap-induced degradation of MoS2 field effect transistors

AU - Cho, Young Hoon

AU - Ryu, Min Yeul

AU - Lee, Kook Jin

AU - Park, So Jeong

AU - Choi, Jun Hee

AU - Lee, Byung Chul

AU - Kim, Wungyeon

AU - Kim, Gyu-Tae

PY - 2018/4/4

Y1 - 2018/4/4

N2 - The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

AB - The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

KW - CNFCMF model

KW - degradation

KW - low frequency noise

KW - MoS

UR - http://www.scopus.com/inward/record.url?scp=85045563517&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045563517&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aab4d3

DO - 10.1088/1361-6528/aab4d3

M3 - Article

C2 - 29513275

AN - SCOPUS:85045563517

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 22

M1 - 22LT01

ER -