TY - JOUR
T1 - Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor
AU - Lee, Sojeong
AU - Lee, Won Yong
AU - Jang, Bongho
AU - Kim, Taegyun
AU - Bae, Jin Hyuk
AU - Cho, Kyoungah
AU - Kim, Sangsig
AU - Jang, Jaewon
N1 - Funding Information:
Manuscript received November 11, 2017; accepted November 30, 2017. Date of publication December 4, 2017; date of current version December 27, 2017. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea from the Ministry of Education under Grant NRF-2016R1D1A3B03930896. The review of this letter was arranged by Editor O. Manasreh. (Corresponding author: Jaewon Jang.) S. Lee, W.-Y. Lee, B. Jang, T. Kim, J.-H. Bae, and J. Jang are with the School of Electronics Engineering, Kyungpook National University, Daegu 41566, South Korea (e-mail : j1jang@knu.ac.kr).
PY - 2018/1
Y1 - 2018/1
N2 - Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
AB - Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
KW - CuO
KW - Sol-gel
KW - photocurrent
KW - thin film transistors
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U2 - 10.1109/LED.2017.2779816
DO - 10.1109/LED.2017.2779816
M3 - Article
AN - SCOPUS:85037612479
VL - 39
SP - 47
EP - 50
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 1
M1 - 8141870
ER -