Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Sojeong Lee, Won Yong Lee, Bongho Jang, Taegyun Kim, Jin Hyuk Bae, Kyoungah Cho, Sangsig Kim, Jaewon Jang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.

Original languageEnglish
Article number8141870
Pages (from-to)47-50
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes

Keywords

  • CuO
  • photocurrent
  • Sol-gel
  • thin film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, S., Lee, W. Y., Jang, B., Kim, T., Bae, J. H., Cho, K., Kim, S., & Jang, J. (2018). Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor. IEEE Electron Device Letters, 39(1), 47-50. [8141870]. https://doi.org/10.1109/LED.2017.2779816