Abstract
Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
| Original language | English |
|---|---|
| Article number | 8141870 |
| Pages (from-to) | 47-50 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 39 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Externally published | Yes |
Keywords
- CuO
- photocurrent
- Sol-gel
- thin film transistors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Cite this
Lee, S., Lee, W. Y., Jang, B., Kim, T., Bae, J. H., Cho, K., Kim, S., & Jang, J. (2018). Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor. IEEE Electron Device Letters, 39(1), 47-50. [8141870]. https://doi.org/10.1109/LED.2017.2779816