Abstract
Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
| Original language | English |
|---|---|
| Article number | 8141870 |
| Pages (from-to) | 47-50 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 39 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Externally published | Yes |
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Keywords
- CuO
- photocurrent
- Sol-gel
- thin film transistors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor. / Lee, Sojeong; Lee, Won Yong; Jang, Bongho; Kim, Taegyun; Bae, Jin Hyuk; Cho, Kyoungah; Kim, Sangsig; Jang, Jaewon.
In: IEEE Electron Device Letters, Vol. 39, No. 1, 8141870, 01.01.2018, p. 47-50.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor
AU - Lee, Sojeong
AU - Lee, Won Yong
AU - Jang, Bongho
AU - Kim, Taegyun
AU - Bae, Jin Hyuk
AU - Cho, Kyoungah
AU - Kim, Sangsig
AU - Jang, Jaewon
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
AB - Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
KW - CuO
KW - photocurrent
KW - Sol-gel
KW - thin film transistors
UR - http://www.scopus.com/inward/record.url?scp=85037612479&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85037612479&partnerID=8YFLogxK
U2 - 10.1109/LED.2017.2779816
DO - 10.1109/LED.2017.2779816
M3 - Article
AN - SCOPUS:85037612479
VL - 39
SP - 47
EP - 50
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 1
M1 - 8141870
ER -