Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Sojeong Lee, Won Yong Lee, Bongho Jang, Taegyun Kim, Jin Hyuk Bae, Kyoungah Cho, Sangsig Kim, Jaewon Jang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.

Original languageEnglish
Article number8141870
Pages (from-to)47-50
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes

Fingerprint

Phototransistors
Sol-gels
Thin film transistors
Infrared radiation
Sensors
Infrared imaging
Photodetectors
Ink
Nanowires
Solar cells
Electronic equipment

Keywords

  • CuO
  • photocurrent
  • Sol-gel
  • thin film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lee, S., Lee, W. Y., Jang, B., Kim, T., Bae, J. H., Cho, K., ... Jang, J. (2018). Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor. IEEE Electron Device Letters, 39(1), 47-50. [8141870]. https://doi.org/10.1109/LED.2017.2779816

Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor. / Lee, Sojeong; Lee, Won Yong; Jang, Bongho; Kim, Taegyun; Bae, Jin Hyuk; Cho, Kyoungah; Kim, Sangsig; Jang, Jaewon.

In: IEEE Electron Device Letters, Vol. 39, No. 1, 8141870, 01.01.2018, p. 47-50.

Research output: Contribution to journalArticle

Lee, S, Lee, WY, Jang, B, Kim, T, Bae, JH, Cho, K, Kim, S & Jang, J 2018, 'Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor', IEEE Electron Device Letters, vol. 39, no. 1, 8141870, pp. 47-50. https://doi.org/10.1109/LED.2017.2779816
Lee, Sojeong ; Lee, Won Yong ; Jang, Bongho ; Kim, Taegyun ; Bae, Jin Hyuk ; Cho, Kyoungah ; Kim, Sangsig ; Jang, Jaewon. / Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor. In: IEEE Electron Device Letters. 2018 ; Vol. 39, No. 1. pp. 47-50.
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