Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Sojeong Lee; Won Yong Lee; Bongho Jang; Taegyun Kim; Jin Hyuk Bae; Kyoungah Cho; Sangsig Kim; Jaewon Jang

doi:10.1109/LED.2017.2779816

Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Sojeong Lee, Won Yong Lee, Bongho Jang, Taegyun Kim, Jin Hyuk Bae, Kyoungah Cho, Sangsig Kim, Jaewon Jang

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.

Original language	English
Article number	8141870
Pages (from-to)	47-50
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	1
DOIs	https://doi.org/10.1109/LED.2017.2779816
Publication status	Published - 2018 Jan
Externally published	Yes

Keywords

CuO
Sol-gel
photocurrent
thin film transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2017.2779816

Cite this

@article{69e437a8ef5c4999b7393f53a5584c93,

title = "Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor",

abstract = "Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.",

keywords = "CuO, Sol-gel, photocurrent, thin film transistors",

author = "Sojeong Lee and Lee, {Won Yong} and Bongho Jang and Taegyun Kim and Bae, {Jin Hyuk} and Kyoungah Cho and Sangsig Kim and Jaewon Jang",

note = "Funding Information: Manuscript received November 11, 2017; accepted November 30, 2017. Date of publication December 4, 2017; date of current version December 27, 2017. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea from the Ministry of Education under Grant NRF-2016R1D1A3B03930896. The review of this letter was arranged by Editor O. Manasreh. (Corresponding author: Jaewon Jang.) S. Lee, W.-Y. Lee, B. Jang, T. Kim, J.-H. Bae, and J. Jang are with the School of Electronics Engineering, Kyungpook National University, Daegu 41566, South Korea (e-mail : j1jang@knu.ac.kr). Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2018",

month = jan,

doi = "10.1109/LED.2017.2779816",

language = "English",

volume = "39",

pages = "47--50",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

AU - Lee, Sojeong

AU - Lee, Won Yong

AU - Jang, Bongho

AU - Kim, Taegyun

AU - Bae, Jin Hyuk

AU - Cho, Kyoungah

AU - Kim, Sangsig

AU - Jang, Jaewon

N1 - Funding Information: Manuscript received November 11, 2017; accepted November 30, 2017. Date of publication December 4, 2017; date of current version December 27, 2017. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea from the Ministry of Education under Grant NRF-2016R1D1A3B03930896. The review of this letter was arranged by Editor O. Manasreh. (Corresponding author: Jaewon Jang.) S. Lee, W.-Y. Lee, B. Jang, T. Kim, J.-H. Bae, and J. Jang are with the School of Electronics Engineering, Kyungpook National University, Daegu 41566, South Korea (e-mail : j1jang@knu.ac.kr). Publisher Copyright: © 2017 IEEE.

PY - 2018/1

Y1 - 2018/1

N2 - Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.

AB - Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38 × 10 11 (cm Hz 1/ W -1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.

KW - CuO

KW - Sol-gel

KW - photocurrent

KW - thin film transistors

UR - http://www.scopus.com/inward/record.url?scp=85037612479&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2779816

DO - 10.1109/LED.2017.2779816

M3 - Article

AN - SCOPUS:85037612479

VL - 39

SP - 47

EP - 50

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

M1 - 8141870

ER -

Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this