Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake

Sooyeoun Oh, Michael A. Mastro, Marko J. Tadjer, Ji Hyun Kim

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Semiconductor materials ideal for solar-blind photodetectors (PDs) require an ultra-wide and direct bandgap to detect UV-C spectral wavelengths effectively. Using the mechanically exfoliated high-quality β-Ga2O3 micro-flakes that have a direct bandgap of ∼4.8 eV, we fabricated solar-blind PDs with a metal-semiconductor-metal (MSM) structure that can reduce the dark current, and then systemically investigated their photoresponse properties. The MSM devices with two Ni/Au Schottky contacts exhibited an extremely low dark current and high sensitivity (ratio of photocurrent to dark current > 103) in UV-C wavelengths. In addition, they exhibited fast and stable on/off characteristics and high responsivity (1.68 A/W), with a superior rejection ratio when compared with the reported thin-film MSM solar-blind PDs, indicating the high potential of the quasi-two-dimensional β-Ga2O3 for optoelectronic applications.

Original languageEnglish
Pages (from-to)Q79-Q83
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number8
DOIs
Publication statusPublished - 2017

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Photodetectors
Metals
Semiconductor materials
Dark currents
Energy gap
Wavelength
Photocurrents
Optoelectronic devices
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake. / Oh, Sooyeoun; Mastro, Michael A.; Tadjer, Marko J.; Kim, Ji Hyun.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 8, 2017, p. Q79-Q83.

Research output: Contribution to journalArticle

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