Solid-phase epitaxy emitter for silicon solar cells

Hyunho Kim, Sungeun Park, Kwang Sun Ji, Kyung Dong Lee, Seongtak Kim, Soohyun Bae, Seh Won Ahn, Heon Min Lee, Yoonmook Kang, Hae Seok Lee, Donghwan Kim

Research output: Contribution to journalArticlepeer-review


This paper presents a new emitter formation method, "solid-phase epitaxy emitter," that involves an applied solid-phase epitaxial growth based on the rapid thermal processing of a-Si:H thin films. We describe the solid-phase epitaxial growth of intrinsic and phosphorous-doped a-Si:H thin films through rapid thermal processing using radio-frequency plasma-enhanced chemical vapor deposition. The phase transition of these films results from heat treatment above 600°C. We examined the defects in the epitaxially grown silicon that formed at the phase interfaces. Phosphorous-doped a-Si:H produced using phosphine gas (PH3, diluted H2) exhibited a diminished crystallinity compared with intrinsic a-Si:H because of the disturbance of dopant atoms. Based on this formation method, we fabricated a solid-phase epitaxy emitter cell with an efficiency of 16.7%. In addition, this method is expected to be simpler and more cost effective than the conventional method.

Original languageEnglish
Pages (from-to)10702-10706
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number10
Publication statusPublished - 2016 Oct


  • Crystallization
  • Solar cells
  • Solid-Phase Epitaxy Emitter (SEE)
  • Solid-phase epitaxy

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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