Solid-phase epitaxy emitter for silicon solar cells

Hyunho Kim, Sungeun Park, Kwang Sun Ji, Kyung Dong Lee, Seongtak Kim, Soohyun Bae, Seh Won Ahn, Heon Min Lee, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

Abstract

This paper presents a new emitter formation method, "solid-phase epitaxy emitter," that involves an applied solid-phase epitaxial growth based on the rapid thermal processing of a-Si:H thin films. We describe the solid-phase epitaxial growth of intrinsic and phosphorous-doped a-Si:H thin films through rapid thermal processing using radio-frequency plasma-enhanced chemical vapor deposition. The phase transition of these films results from heat treatment above 600°C. We examined the defects in the epitaxially grown silicon that formed at the phase interfaces. Phosphorous-doped a-Si:H produced using phosphine gas (PH3, diluted H2) exhibited a diminished crystallinity compared with intrinsic a-Si:H because of the disturbance of dopant atoms. Based on this formation method, we fabricated a solid-phase epitaxy emitter cell with an efficiency of 16.7%. In addition, this method is expected to be simpler and more cost effective than the conventional method.

Original languageEnglish
Pages (from-to)10702-10706
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number10
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

Silicon solar cells
Silicon
Epitaxial growth
epitaxy
solid phases
emitters
solar cells
Rapid thermal processing
phosphine
Hot Temperature
Phase interfaces
Thin films
Phase Transition
Plasma enhanced chemical vapor deposition
Growth
thin films
Radio
phosphines
crystallinity
radio frequencies

Keywords

  • Crystallization
  • Solar cells
  • Solid-phase epitaxy
  • Solid-Phase Epitaxy Emitter (SEE)

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Solid-phase epitaxy emitter for silicon solar cells. / Kim, Hyunho; Park, Sungeun; Ji, Kwang Sun; Lee, Kyung Dong; Kim, Seongtak; Bae, Soohyun; Ahn, Seh Won; Lee, Heon Min; Kang, Yoon Mook; Lee, Haeseok; Kim, Donghwan.

In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 10, 01.10.2016, p. 10702-10706.

Research output: Contribution to journalArticle

Kim, H, Park, S, Ji, KS, Lee, KD, Kim, S, Bae, S, Ahn, SW, Lee, HM, Kang, YM, Lee, H & Kim, D 2016, 'Solid-phase epitaxy emitter for silicon solar cells', Journal of Nanoscience and Nanotechnology, vol. 16, no. 10, pp. 10702-10706. https://doi.org/10.1166/jnn.2016.13222
Kim, Hyunho ; Park, Sungeun ; Ji, Kwang Sun ; Lee, Kyung Dong ; Kim, Seongtak ; Bae, Soohyun ; Ahn, Seh Won ; Lee, Heon Min ; Kang, Yoon Mook ; Lee, Haeseok ; Kim, Donghwan. / Solid-phase epitaxy emitter for silicon solar cells. In: Journal of Nanoscience and Nanotechnology. 2016 ; Vol. 16, No. 10. pp. 10702-10706.
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AU - Ahn, Seh Won

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AB - This paper presents a new emitter formation method, "solid-phase epitaxy emitter," that involves an applied solid-phase epitaxial growth based on the rapid thermal processing of a-Si:H thin films. We describe the solid-phase epitaxial growth of intrinsic and phosphorous-doped a-Si:H thin films through rapid thermal processing using radio-frequency plasma-enhanced chemical vapor deposition. The phase transition of these films results from heat treatment above 600°C. We examined the defects in the epitaxially grown silicon that formed at the phase interfaces. Phosphorous-doped a-Si:H produced using phosphine gas (PH3, diluted H2) exhibited a diminished crystallinity compared with intrinsic a-Si:H because of the disturbance of dopant atoms. Based on this formation method, we fabricated a solid-phase epitaxy emitter cell with an efficiency of 16.7%. In addition, this method is expected to be simpler and more cost effective than the conventional method.

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