Abstract
The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10 -2 cm 2 V -1 s -1, a current on/off ratio of 10 5, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.
| Original language | English |
|---|---|
| Journal | Semiconductor Science and Technology |
| Volume | 23 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2008 Aug 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate. / Shin, Sang Il; Kwon, Jae Hong; Kang, Hochul; Ju, Byeong Kwon.
In: Semiconductor Science and Technology, Vol. 23, No. 8, 01.08.2008.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate
AU - Shin, Sang Il
AU - Kwon, Jae Hong
AU - Kang, Hochul
AU - Ju, Byeong Kwon
PY - 2008/8/1
Y1 - 2008/8/1
N2 - The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10 -2 cm 2 V -1 s -1, a current on/off ratio of 10 5, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.
AB - The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10 -2 cm 2 V -1 s -1, a current on/off ratio of 10 5, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.
UR - http://www.scopus.com/inward/record.url?scp=51849119620&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51849119620&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/8/085009
DO - 10.1088/0268-1242/23/8/085009
M3 - Article
AN - SCOPUS:51849119620
VL - 23
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 8
ER -