Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

Sang Il Shin; Jae Hong Kwon; Hochul Kang; Byeong Kwon Ju

doi:10.1088/0268-1242/23/8/085009

Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

Sang Il Shin, Jae Hong Kwon, Hochul Kang, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10^-2 cm² V^-1 s^-1, a current on/off ratio of 10⁵, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

Original language	English
Number of pages	1
Journal	Semiconductor Science and Technology
Volume	23
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/23/8/085009
Publication status	Published - 2008 Aug 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Shin, S. I., Kwon, J. H., Kang, H., & Ju, B. K. (2008). Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate. Semiconductor Science and Technology, 23(8). https://doi.org/10.1088/0268-1242/23/8/085009

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abstract = "The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10-2 cm2 V-1 s-1, a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.",

author = "Shin, {Sang Il} and Kwon, {Jae Hong} and Hochul Kang and Ju, {Byeong Kwon}",

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AU - Shin, Sang Il

AU - Kwon, Jae Hong

AU - Kang, Hochul

AU - Ju, Byeong Kwon

PY - 2008/8/1

Y1 - 2008/8/1

N2 - The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10-2 cm2 V-1 s-1, a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

AB - The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10-2 cm2 V-1 s-1, a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

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