Abstract
Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
| Original language | English |
|---|---|
| Pages (from-to) | 56-61 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 142 |
| DOIs | |
| Publication status | Published - 2018 Apr 1 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Solution-processed flexible NiO resistive random access memory device. / Kim, Soo Jung; Lee, Heon; Hong, Sung Hoon.
In: Solid-State Electronics, Vol. 142, 01.04.2018, p. 56-61.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Solution-processed flexible NiO resistive random access memory device
AU - Kim, Soo Jung
AU - Lee, Heon
AU - Hong, Sung Hoon
PY - 2018/4/1
Y1 - 2018/4/1
N2 - Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
AB - Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
UR - http://www.scopus.com/inward/record.url?scp=85042514159&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85042514159&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2018.02.006
DO - 10.1016/j.sse.2018.02.006
M3 - Article
AN - SCOPUS:85042514159
VL - 142
SP - 56
EP - 61
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
ER -