Solution-processed flexible NiO resistive random access memory device

Soo Jung Kim, Heon Lee, Sung Hoon Hong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Original languageEnglish
Pages (from-to)56-61
Number of pages6
JournalSolid-State Electronics
Volume142
DOIs
Publication statusPublished - 2018 Apr 1

Fingerprint

random access memory
Nanocrystals
nanocrystals
Data storage equipment
Crystallization
drying
Atomic force microscopy
heat treatment
Heat treatment
atomic force microscopy
crystallization
Temperature
electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Solution-processed flexible NiO resistive random access memory device. / Kim, Soo Jung; Lee, Heon; Hong, Sung Hoon.

In: Solid-State Electronics, Vol. 142, 01.04.2018, p. 56-61.

Research output: Contribution to journalArticle

Kim, Soo Jung ; Lee, Heon ; Hong, Sung Hoon. / Solution-processed flexible NiO resistive random access memory device. In: Solid-State Electronics. 2018 ; Vol. 142. pp. 56-61.
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