Abstract
Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
| Original language | English |
|---|---|
| Pages (from-to) | 56-61 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 142 |
| DOIs | |
| Publication status | Published - 2018 Apr 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Fingerprint Dive into the research topics of 'Solution-processed flexible NiO resistive random access memory device'. Together they form a unique fingerprint.
Cite this
Kim, S. J., Lee, H., & Hong, S. H. (2018). Solution-processed flexible NiO resistive random access memory device. Solid-State Electronics, 142, 56-61. https://doi.org/10.1016/j.sse.2018.02.006