Solution-processed flexible NiO resistive random access memory device

Soo Jung Kim; Heon Lee; Sung Hoon Hong

doi:10.1016/j.sse.2018.02.006

Solution-processed flexible NiO resistive random access memory device

Soo Jung Kim, Heon Lee, Sung Hoon Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Original language	English
Pages (from-to)	56-61
Number of pages	6
Journal	Solid-State Electronics
Volume	142
DOIs	https://doi.org/10.1016/j.sse.2018.02.006
Publication status	Published - 2018 Apr

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2018.02.006

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title = "Solution-processed flexible NiO resistive random access memory device",

abstract = "Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).",

author = "Kim, {Soo Jung} and Heon Lee and Hong, {Sung Hoon}",

note = "Funding Information: This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning ( NRF-2013M3C1A3063046 ), Samsung Electronics, and Institute for Information & Communications Technology Promotion (IITP) grant funded by the Korean government (MSIP) ( B0117-16-1004 ). Publisher Copyright: {\textcopyright} 2018",

year = "2018",

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doi = "10.1016/j.sse.2018.02.006",

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volume = "142",

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AU - Kim, Soo Jung

AU - Lee, Heon

AU - Hong, Sung Hoon

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PY - 2018/4

Y1 - 2018/4

N2 - Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

AB - Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

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EP - 61

JO - Solid-State Electronics

JF - Solid-State Electronics

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Solution-processed flexible NiO resistive random access memory device

Abstract

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