Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors

S. Choi, B. Y. Park, M. Jang, S. Jeong, J. Y. Lee, B. H. Ryu, T. Y. Seong, H. K. Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

ZnO-based low power operating thin film transistors (TFTs) were fabricated by a simple and robust solution process. Combined the amorphous oxide semiconductors with the high capacitance lanthanide oxides thin film, Y 2O3 and Gd2O3, as a gate insulator, the resultant device exhibits an enhanced device performance; lower threshold voltage, increased carrier mobility, and smaller subthreshold slope with exceptionally low operating voltage than the typical TFT devices using a SiO2 gate insulator.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages901-908
Number of pages8
Edition4
DOIs
Publication statusPublished - 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2011 May 12011 May 6

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period11/5/111/5/6

ASJC Scopus subject areas

  • Engineering(all)

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    Choi, S., Park, B. Y., Jang, M., Jeong, S., Lee, J. Y., Ryu, B. H., Seong, T. Y., & Jung, H. K. (2011). Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 901-908). (ECS Transactions; Vol. 35, No. 4). https://doi.org/10.1149/1.3572327