Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors

S. Choi, B. Y. Park, M. Jang, S. Jeong, J. Y. Lee, B. H. Ryu, Tae Yeon Seong, H. K. Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

ZnO-based low power operating thin film transistors (TFTs) were fabricated by a simple and robust solution process. Combined the amorphous oxide semiconductors with the high capacitance lanthanide oxides thin film, Y 2O3 and Gd2O3, as a gate insulator, the resultant device exhibits an enhanced device performance; lower threshold voltage, increased carrier mobility, and smaller subthreshold slope with exceptionally low operating voltage than the typical TFT devices using a SiO2 gate insulator.

Original languageEnglish
Title of host publicationECS Transactions
Pages901-908
Number of pages8
Volume35
Edition4
DOIs
Publication statusPublished - 2011 Aug 2
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2011 May 12011 May 6

Other

OtherSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period11/5/111/5/6

Fingerprint

Thin film transistors
Rare earth elements
Amorphous semiconductors
Oxides
Carrier mobility
Electric potential
Threshold voltage
Oxide films
Capacitance
Thin films
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Choi, S., Park, B. Y., Jang, M., Jeong, S., Lee, J. Y., Ryu, B. H., ... Jung, H. K. (2011). Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. In ECS Transactions (4 ed., Vol. 35, pp. 901-908) https://doi.org/10.1149/1.3572327

Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. / Choi, S.; Park, B. Y.; Jang, M.; Jeong, S.; Lee, J. Y.; Ryu, B. H.; Seong, Tae Yeon; Jung, H. K.

ECS Transactions. Vol. 35 4. ed. 2011. p. 901-908.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Choi, S, Park, BY, Jang, M, Jeong, S, Lee, JY, Ryu, BH, Seong, TY & Jung, HK 2011, Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. in ECS Transactions. 4 edn, vol. 35, pp. 901-908, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting, Montreal, QC, Canada, 11/5/1. https://doi.org/10.1149/1.3572327
Choi S, Park BY, Jang M, Jeong S, Lee JY, Ryu BH et al. Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. In ECS Transactions. 4 ed. Vol. 35. 2011. p. 901-908 https://doi.org/10.1149/1.3572327
Choi, S. ; Park, B. Y. ; Jang, M. ; Jeong, S. ; Lee, J. Y. ; Ryu, B. H. ; Seong, Tae Yeon ; Jung, H. K. / Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. ECS Transactions. Vol. 35 4. ed. 2011. pp. 901-908
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