Abstract
We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.
| Original language | English |
|---|---|
| Title of host publication | Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 |
| Publisher | Electrochemical Society Inc. |
| Pages | 321-323 |
| Number of pages | 3 |
| Volume | 72 |
| Edition | 4 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2016 |
| Event | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States Duration: 2016 May 29 → 2016 Jun 2 |
Other
| Other | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting |
|---|---|
| Country | United States |
| City | San Diego |
| Period | 16/5/29 → 16/6/2 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Kim, S. H., Kim, G. S., Kim, S. W., & Yu, H-Y. (2016). Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 (4 ed., Vol. 72, pp. 321-323). Electrochemical Society Inc.. https://doi.org/10.1149/07204.0321ecst