Abstract
We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.
| Original language | English |
|---|---|
| Title of host publication | Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 |
| Publisher | Electrochemical Society Inc. |
| Pages | 321-323 |
| Number of pages | 3 |
| Volume | 72 |
| Edition | 4 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2016 |
| Event | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States Duration: 2016 May 29 → 2016 Jun 2 |
Other
| Other | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting |
|---|---|
| Country | United States |
| City | San Diego |
| Period | 16/5/29 → 16/6/2 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. / Kim, Seung Hwan; Kim, Gwang Sik; Kim, Sun Woo; Yu, Hyun-Yong.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. Vol. 72 4. ed. Electrochemical Society Inc., 2016. p. 321-323.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure
AU - Kim, Seung Hwan
AU - Kim, Gwang Sik
AU - Kim, Sun Woo
AU - Yu, Hyun-Yong
PY - 2016
Y1 - 2016
N2 - We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.
AB - We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.
UR - http://www.scopus.com/inward/record.url?scp=85010635531&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010635531&partnerID=8YFLogxK
U2 - 10.1149/07204.0321ecst
DO - 10.1149/07204.0321ecst
M3 - Conference contribution
AN - SCOPUS:85010635531
VL - 72
SP - 321
EP - 323
BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
PB - Electrochemical Society Inc.
ER -