@inproceedings{745b80378ef54d48ab58b62c9c2f71e4,
title = "Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure",
abstract = "We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.",
author = "Kim, {Seung Hwan} and Kim, {Gwang Sik} and Kim, {Sun Woo} and Yu, {Hyun Yong}",
note = "Funding Information: This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning under Grant 2014R1A1A1036090. Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",
year = "2016",
doi = "10.1149/07204.0321ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "321--323",
editor = "K. Kakushima and F. Roozeboom and Timans, {P. J.} and {De Gendt}, S. and Z. Karim and Gusev, {E. P.} and V. Narayanan",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6",
edition = "4",
}