Abstract
We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.
Original language | English |
---|---|
Title of host publication | Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 |
Publisher | Electrochemical Society Inc. |
Pages | 321-323 |
Number of pages | 3 |
Volume | 72 |
Edition | 4 |
ISBN (Electronic) | 9781607685395 |
DOIs | |
Publication status | Published - 2016 |
Event | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States Duration: 2016 May 29 → 2016 Jun 2 |
Other
Other | Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting |
---|---|
Country | United States |
City | San Diego |
Period | 16/5/29 → 16/6/2 |
ASJC Scopus subject areas
- Engineering(all)