Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure

Seung Hwan Kim, Gwang Sik Kim, Sun Woo Kim, Hyun-Yong Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
PublisherElectrochemical Society Inc.
Pages321-323
Number of pages3
Volume72
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States
Duration: 2016 May 292016 Jun 2

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period16/5/2916/6/2

ASJC Scopus subject areas

  • Engineering(all)

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    Kim, S. H., Kim, G. S., Kim, S. W., & Yu, H-Y. (2016). Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 (4 ed., Vol. 72, pp. 321-323). Electrochemical Society Inc.. https://doi.org/10.1149/07204.0321ecst