Space charge limited current and polarization in AlGaN/GaN nanowires

M. A. Mastro, H. Y. Kim, J. Ahn, J. Kim, J. K. Hite, C. R. Eddy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An undoped AlGaN/GaN nanowire displayed a transition at approximately 2V from Ohmic conduction at low drain-source voltage to space charge limited conduction at high drain-source voltage. Growth of the nanowire from a metal seed manifests as a triangular cross-section with one Ga-polar (0001) facet and two semi-polar {-110-1} facets. Conduction was based on a polarization induced two-dimensional electron gas that formed at the (0001) AlGaN/GaN interface. A simulation showed that the surface and the opposing polarization field at the semi-polar AlGaN/GaN interface will distort and reduce the carrier concentration at the (0001) AlGaN/GaN interface.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages33-38
Number of pages6
Edition6
DOIs
Publication statusPublished - 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Mastro, M. A., Kim, H. Y., Ahn, J., Kim, J., Hite, J. K., & Eddy, C. R. (2011). Space charge limited current and polarization in AlGaN/GaN nanowires. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 33-38). (ECS Transactions; Vol. 41, No. 6). https://doi.org/10.1149/1.3629951