Space-charge-limited injection in n+-i-n+ structures fabricated by a focused ion beam

S. W. Hwang, H. J. Lezec, T. Sakamoto, N. Nakamura, J. H. Pak

Research output: Contribution to journalArticle

Abstract

Transport characteristics of n+-i-n+ structures fabricated on a GaAs/AlGaAs HEMT wafer are presented. An insulating strip (i) between two-dimensional electron gases (n+) is created by a single line scan of a focused ion beam. At sufficiently large biases, the current-voltage (I-V) characteristics of the n+-i-n+ structures display highly linear increases of the currents as a function of the biases. The observed I-V's are quantitatively explained by the space-charge-limited injection into the insulating region when the bias is large enough for the flatband condition. The charged defect density and the length of the insulating region are obtained from the I-V characteristics.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Space-charge-limited injection in n<sup>+</sup>-i-n<sup>+</sup> structures fabricated by a focused ion beam'. Together they form a unique fingerprint.

  • Cite this