Space-charge-limited injection in n+-i-n+ structures fabricated by a focused ion beam

S. W. Hwang, H. J. Lezec, T. Sakamoto, N. Nakamura, Jung ho Park

Research output: Contribution to journalArticle

Abstract

Transport characteristics of n+-i-n+ structures fabricated on a GaAs/AlGaAs HEMT wafer are presented. An insulating strip (i) between two-dimensional electron gases (n+) is created by a single line scan of a focused ion beam. At sufficiently large biases, the current-voltage (I-V) characteristics of the n+-i-n+ structures display highly linear increases of the currents as a function of the biases. The observed I-V's are quantitatively explained by the space-charge-limited injection into the insulating region when the bias is large enough for the flatband condition. The charged defect density and the length of the insulating region are obtained from the I-V characteristics.

Original languageEnglish
Pages (from-to)3159
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

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space charge
ion beams
injection
high electron mobility transistors
aluminum gallium arsenides
electron gas
strip
wafers
defects
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Space-charge-limited injection in n+-i-n+ structures fabricated by a focused ion beam. / Hwang, S. W.; Lezec, H. J.; Sakamoto, T.; Nakamura, N.; Park, Jung ho.

In: Applied Physics Letters, Vol. 67, 1995, p. 3159.

Research output: Contribution to journalArticle

Hwang, S. W. ; Lezec, H. J. ; Sakamoto, T. ; Nakamura, N. ; Park, Jung ho. / Space-charge-limited injection in n+-i-n+ structures fabricated by a focused ion beam. In: Applied Physics Letters. 1995 ; Vol. 67. pp. 3159.
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