Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

In-Hwan Lee, Alexander Y. Polyakov, Nikolai B. Smirnov, Cheol Koo Hahn, S. J. Pearton

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

Original languageEnglish
Article number050602
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number5
DOIs
Publication statusPublished - 2014 Sep 1
Externally publishedYes

Fingerprint

Electron traps
High electron mobility transistors
Heterojunctions
heterojunctions
traps
high electron mobility transistors
Deep level transient spectroscopy
Ionization
electrons
Capacitance
Degradation
Buffers
buffers
capacitance
signatures
degradation
ionization
spectroscopy
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions. / Lee, In-Hwan; Polyakov, Alexander Y.; Smirnov, Nikolai B.; Hahn, Cheol Koo; Pearton, S. J.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 5, 050602, 01.09.2014.

Research output: Contribution to journalArticle

Lee, In-Hwan ; Polyakov, Alexander Y. ; Smirnov, Nikolai B. ; Hahn, Cheol Koo ; Pearton, S. J. / Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2014 ; Vol. 32, No. 5.
@article{a89f4af3a4764919a39a518774031aed,
title = "Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions",
abstract = "Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.",
author = "In-Hwan Lee and Polyakov, {Alexander Y.} and Smirnov, {Nikolai B.} and Hahn, {Cheol Koo} and Pearton, {S. J.}",
year = "2014",
month = "9",
day = "1",
doi = "10.1116/1.4895840",
language = "English",
volume = "32",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "5",

}

TY - JOUR

T1 - Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

AU - Lee, In-Hwan

AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

AU - Hahn, Cheol Koo

AU - Pearton, S. J.

PY - 2014/9/1

Y1 - 2014/9/1

N2 - Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

AB - Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

UR - http://www.scopus.com/inward/record.url?scp=84929399577&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929399577&partnerID=8YFLogxK

U2 - 10.1116/1.4895840

DO - 10.1116/1.4895840

M3 - Article

AN - SCOPUS:84929399577

VL - 32

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 5

M1 - 050602

ER -