Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire

J. S. Song, H. Rho, M. S. Jeong, J. W. Ju, In-Hwan Lee

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E2 (low) and E2 (high) phonon modes at ∼143 and ∼569 cm-1, respectively. Interestingly, the E2 (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E2 (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO 2 stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.

Original languageEnglish
Article number233304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number23
DOIs
Publication statusPublished - 2010 Jun 21
Externally publishedYes

Fingerprint

Aluminum Oxide
Sapphire
Raman scattering
Photoluminescence
sapphire
photoluminescence
Dislocations (crystals)
Masks
Microscopes
Raman spectra
Crystalline materials
Scanning
Substrates
optical microscopes
near fields
masks
scanning

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire. / Song, J. S.; Rho, H.; Jeong, M. S.; Ju, J. W.; Lee, In-Hwan.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 23, 233304, 21.06.2010.

Research output: Contribution to journalArticle

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