Abstract
We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E2 (low) and E2 (high) phonon modes at ∼143 and ∼569 cm-1, respectively. Interestingly, the E2 (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E2 (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO 2 stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.
| Original language | English |
|---|---|
| Article number | 233304 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 81 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2010 Jun 21 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
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Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire. / Song, J. S.; Rho, H.; Jeong, M. S.; Ju, J. W.; Lee, In-Hwan.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 23, 233304, 21.06.2010.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire
AU - Song, J. S.
AU - Rho, H.
AU - Jeong, M. S.
AU - Ju, J. W.
AU - Lee, In-Hwan
PY - 2010/6/21
Y1 - 2010/6/21
N2 - We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E2 (low) and E2 (high) phonon modes at ∼143 and ∼569 cm-1, respectively. Interestingly, the E2 (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E2 (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO 2 stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.
AB - We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E2 (low) and E2 (high) phonon modes at ∼143 and ∼569 cm-1, respectively. Interestingly, the E2 (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E2 (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO 2 stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.
UR - http://www.scopus.com/inward/record.url?scp=77956318972&partnerID=8YFLogxK
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U2 - 10.1103/PhysRevB.81.233304
DO - 10.1103/PhysRevB.81.233304
M3 - Article
AN - SCOPUS:77956318972
VL - 81
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 23
M1 - 233304
ER -