Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire

J. S. Song; H. Rho; M. S. Jeong; J. W. Ju; I. H. Lee

doi:10.1103/PhysRevB.81.233304

Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire

J. S. Song, H. Rho, M. S. Jeong, J. W. Ju, I. H. Lee

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E₂ (low) and E₂ (high) phonon modes at ∼143 and ∼569 cm^-1, respectively. Interestingly, the E₂ (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E₂ (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO ₂ stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.

Original language	English
Article number	233304
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.81.233304
Publication status	Published - 2010 Jun 21
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire",

abstract = "We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E2 (low) and E2 (high) phonon modes at ∼143 and ∼569 cm-1, respectively. Interestingly, the E2 (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E2 (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO 2 stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.",

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AU - Song, J. S.

AU - Rho, H.

AU - Jeong, M. S.

AU - Ju, J. W.

AU - Lee, I. H.

PY - 2010/6/21

Y1 - 2010/6/21

N2 - We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E2 (low) and E2 (high) phonon modes at ∼143 and ∼569 cm-1, respectively. Interestingly, the E2 (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E2 (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO 2 stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.

AB - We report spatially resolved photoluminescence (PL) and micro-Raman scattering studies of epitaxial lateral overgrowth (ELO) of GaN on a SiO2 -masked sapphire substrate. Near-field scanning optical microscope measurements show that the ELO layers exhibit strong band-edge emission and yellow-band emission. Raman spectra reveal E2 (low) and E2 (high) phonon modes at ∼143 and ∼569 cm-1, respectively. Interestingly, the E2 (high) phonon intensity is significantly increased in the ELO layers. Furthermore, minima of the spectral widths of this mode occur in the ELO layers. The E2 (low) phonon mode exhibits similar behavior, that is, its intensity is stronger in ELO GaN on SiO 2 stripes than in coherently grown GaN on the mask openings. PL and Raman results suggest that crystalline quality is enhanced and threading dislocation density is reduced in the ELO layers.

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