Specific contact resistivity reduction through Ar plasma-treated TiO2-x interfacial layer to metal/Ge contact

Gwang Sik Kim, Jeong Kyu Kim, Seung Hwan Kim, Jaesung Jo, Changhwan Shin, Jin Hong Park, Krishna C. Saraswat, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10-3 Ω · cm2 on moderately doped n-type Ge substrate (6× 1016 cm-3) was achieved, exhibiting (× 584) reduction from Ti/Ge structure, and (× 11) reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.

Original languageEnglish
Pages (from-to)1076-1078
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2014 Nov 1


  • Ar plasma
  • Fermi-level unpinning
  • germanium
  • specific contact resistivity
  • titanium dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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