We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10-3 Ω · cm2 on moderately doped n-type Ge substrate (6× 1016 cm-3) was achieved, exhibiting (× 584) reduction from Ti/Ge structure, and (× 11) reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.
- Ar plasma
- Fermi-level unpinning
- specific contact resistivity
- titanium dioxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering