Spectral characteristics of vertically stacked etched multiple-quantum-wire lasers fabricated by flow rate modulation epitaxy

Tae Geun Kim, Xue L. Wang, Mutsuo Ogura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the spectral characteristics of AlGaAs-GaAs multiple-quantum-wire (QWR) lasers fabricated by flow rate modulation epitaxy on V-grooved substrates. Room-temperature lasing from the fundamental state (le-1hh) is generally observed in devices longer than 350 μm; however, secondary peaks at the adjacent higher subbands are immediately detected following current injection. The evolution of the stimulated emission spectra is investigated here. Typical threshold current and the wavelength tuning rate of current are observed to be 6.2mA and 0.012 nm/mA, respectively, for 800-μm-long uncoated cavities.

Original languageEnglish
Pages (from-to)2516-2519
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number5 A
Publication statusPublished - 2000 May 1
Externally publishedYes

Keywords

  • Flow rate modulation epitaxy
  • Quantum wire lasers
  • Self-limiting effects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Spectral characteristics of vertically stacked etched multiple-quantum-wire lasers fabricated by flow rate modulation epitaxy'. Together they form a unique fingerprint.

  • Cite this