Spectral characteristics of vertically stacked etched multiple-quantum-wire lasers fabricated by flow rate modulation epitaxy

Tae Geun Kim; Xue Lun Wang; Mutsuo Ogura

doi:10.1143/jjap.39.2516

Spectral characteristics of vertically stacked etched multiple-quantum-wire lasers fabricated by flow rate modulation epitaxy

Tae Geun Kim, Xue Lun Wang, Mutsuo Ogura

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the spectral characteristics of AlGaAs-GaAs multiple-quantum-wire (QWR) lasers fabricated by flow rate modulation epitaxy on V-grooved substrates. Room-temperature lasing from the fundamental state (le-1hh) is generally observed in devices longer than 350 μm; however, secondary peaks at the adjacent higher subbands are immediately detected following current injection. The evolution of the stimulated emission spectra is investigated here. Typical threshold current and the wavelength tuning rate of current are observed to be 6.2mA and 0.012 nm/mA, respectively, for 800-μm-long uncoated cavities.

Original language	English
Pages (from-to)	2516-2519
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.39.2516
Publication status	Published - 2000 May 1
Externally published	Yes

Keywords

Flow rate modulation epitaxy
Quantum wire lasers
Self-limiting effects

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.2516

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Spectral characteristics of vertically stacked etched multiple-quantum-wire lasers fabricated by flow rate modulation epitaxy. / Kim, Tae Geun; Wang, Xue Lun; Ogura, Mutsuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 5 A, 01.05.2000, p. 2516-2519.

Research output: Contribution to journal › Article › peer-review

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N2 - We report the spectral characteristics of AlGaAs-GaAs multiple-quantum-wire (QWR) lasers fabricated by flow rate modulation epitaxy on V-grooved substrates. Room-temperature lasing from the fundamental state (le-1hh) is generally observed in devices longer than 350 μm; however, secondary peaks at the adjacent higher subbands are immediately detected following current injection. The evolution of the stimulated emission spectra is investigated here. Typical threshold current and the wavelength tuning rate of current are observed to be 6.2mA and 0.012 nm/mA, respectively, for 800-μm-long uncoated cavities.

AB - We report the spectral characteristics of AlGaAs-GaAs multiple-quantum-wire (QWR) lasers fabricated by flow rate modulation epitaxy on V-grooved substrates. Room-temperature lasing from the fundamental state (le-1hh) is generally observed in devices longer than 350 μm; however, secondary peaks at the adjacent higher subbands are immediately detected following current injection. The evolution of the stimulated emission spectra is investigated here. Typical threshold current and the wavelength tuning rate of current are observed to be 6.2mA and 0.012 nm/mA, respectively, for 800-μm-long uncoated cavities.

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KW - Self-limiting effects

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Spectral characteristics of vertically stacked etched multiple-quantum-wire lasers fabricated by flow rate modulation epitaxy

Abstract

Keywords

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