Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots

J. C. Kim, H. Rho, L. M. Smith, Howard E. Jackson, S. Lee, M. Dobrowolska, J. L. Merz, J. K. Furdyna

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We have investigated the evolution of molecular beam epitaxy (MBE)-grown, CdSe self-assembled quantum dots on ZnSe surfaces using microphotoluminescence techniques. Bare CdSe dots at room temperature undergo Ostwald ripening over a time scale measured in days. At the elevated temperatures maintained for MBE growth and dot formation, ripening is expected to progress much faster. Capping the dots with a thin ZnSe layer "freezes" the ripening, allowing one to sample different stages of the dot evolution and subsequent characterization. We have grown eleven samples, each with a different time interval, or growth interruption, between dot formation and capping; the growth interruption times ranging from 0 to 300 s, during which the samples were kept at 300°C. Using microphotoluminescence spectroscopy, we have resolved the sharp emission peaks due to individual dots in each sample and, by analyzing the ensemble characteristics, have identified a new regime in the evolution of CdSe dots.

Original languageEnglish
Pages (from-to)3399-3401
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number23
DOIs
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots'. Together they form a unique fingerprint.

  • Cite this

    Kim, J. C., Rho, H., Smith, L. M., Jackson, H. E., Lee, S., Dobrowolska, M., Merz, J. L., & Furdyna, J. K. (1998). Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots. Applied Physics Letters, 73(23), 3399-3401. https://doi.org/10.1063/1.122779