Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states

J. T. Ryan, L. C. Yu, J. H. Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, J. S. Suehle

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Abstract

The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.

Original languageEnglish
Article number233502
JournalApplied Physics Letters
Volume98
Issue number23
DOIs
Publication statusPublished - 2011 Jun 6

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., Wang, C., Campbell, J. P., & Suehle, J. S. (2011). Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states. Applied Physics Letters, 98(23), [233502]. https://doi.org/10.1063/1.3597298