Abstract
The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.
| Original language | English |
|---|---|
| Article number | 233502 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2011 Jun 6 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states. / Ryan, J. T.; Yu, L. C.; Han, Jae Ho; Kopanski, J. J.; Cheung, K. P.; Zhang, F.; Wang, C.; Campbell, J. P.; Suehle, J. S.
In: Applied Physics Letters, Vol. 98, No. 23, 233502, 06.06.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states
AU - Ryan, J. T.
AU - Yu, L. C.
AU - Han, Jae Ho
AU - Kopanski, J. J.
AU - Cheung, K. P.
AU - Zhang, F.
AU - Wang, C.
AU - Campbell, J. P.
AU - Suehle, J. S.
PY - 2011/6/6
Y1 - 2011/6/6
N2 - The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.
AB - The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.
UR - http://www.scopus.com/inward/record.url?scp=79959346408&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959346408&partnerID=8YFLogxK
U2 - 10.1063/1.3597298
DO - 10.1063/1.3597298
M3 - Article
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
M1 - 233502
ER -