Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states

J. T. Ryan; L. C. Yu; J. H. Han; J. J. Kopanski; K. P. Cheung; F. Zhang; C. Wang; J. P. Campbell; J. S. Suehle

doi:10.1063/1.3597298

Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO₂ interface states

J. T. Ryan, L. C. Yu, J. H. Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, J. S. Suehle

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The amphoteric nature of Si/ SiO₂ interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric P_b center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.

Original language	English
Article number	233502
Journal	Applied Physics Letters
Volume	98
Issue number	23
DOIs	https://doi.org/10.1063/1.3597298
Publication status	Published - 2011 Jun 6
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3597298

Cite this

@article{c20f553496de4b4184837b23a7be735a,

title = "Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states",

abstract = "The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature {"}double peak{"} density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.",

author = "Ryan, {J. T.} and Yu, {L. C.} and Han, {J. H.} and Kopanski, {J. J.} and Cheung, {K. P.} and F. Zhang and C. Wang and Campbell, {J. P.} and Suehle, {J. S.}",

note = "Funding Information: J.T.R. acknowledges funding support by the National Research Council. This work was partially prepared with the support of the U.S. Department of Commerce under Award No. NIST 60NANB10D109. However, any opinions, findings, conclusions or other recommendations expressed herein are those of the author(s) and do not necessarily reflect the views of the U.S. Commerce Dept.",

year = "2011",

month = jun,

day = "6",

doi = "10.1063/1.3597298",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states

AU - Ryan, J. T.

AU - Yu, L. C.

AU - Han, J. H.

AU - Kopanski, J. J.

AU - Cheung, K. P.

AU - Zhang, F.

AU - Wang, C.

AU - Campbell, J. P.

AU - Suehle, J. S.

N1 - Funding Information: J.T.R. acknowledges funding support by the National Research Council. This work was partially prepared with the support of the U.S. Department of Commerce under Award No. NIST 60NANB10D109. However, any opinions, findings, conclusions or other recommendations expressed herein are those of the author(s) and do not necessarily reflect the views of the U.S. Commerce Dept.

PY - 2011/6/6

Y1 - 2011/6/6

N2 - The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.

AB - The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.

UR - http://www.scopus.com/inward/record.url?scp=79959346408&partnerID=8YFLogxK

U2 - 10.1063/1.3597298

DO - 10.1063/1.3597298

M3 - Article

AN - SCOPUS:79959346408

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233502

ER -

Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO₂ interface states

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this