Abstract
The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.
Original language | English |
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Article number | 233502 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2011 Jun 6 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)