Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states

J. T. Ryan, L. C. Yu, Jae Ho Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, J. S. Suehle

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.

Original languageEnglish
Article number233502
JournalApplied Physics Letters
Volume98
Issue number23
DOIs
Publication statusPublished - 2011 Jun 6
Externally publishedYes

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pumping
silicon transistors
metal oxides
electron paramagnetic resonance
field effect transistors
signatures
methodology
sensitivity
defects
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., ... Suehle, J. S. (2011). Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states. Applied Physics Letters, 98(23), [233502]. https://doi.org/10.1063/1.3597298

Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states. / Ryan, J. T.; Yu, L. C.; Han, Jae Ho; Kopanski, J. J.; Cheung, K. P.; Zhang, F.; Wang, C.; Campbell, J. P.; Suehle, J. S.

In: Applied Physics Letters, Vol. 98, No. 23, 233502, 06.06.2011.

Research output: Contribution to journalArticle

Ryan, JT, Yu, LC, Han, JH, Kopanski, JJ, Cheung, KP, Zhang, F, Wang, C, Campbell, JP & Suehle, JS 2011, 'Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states', Applied Physics Letters, vol. 98, no. 23, 233502. https://doi.org/10.1063/1.3597298
Ryan, J. T. ; Yu, L. C. ; Han, Jae Ho ; Kopanski, J. J. ; Cheung, K. P. ; Zhang, F. ; Wang, C. ; Campbell, J. P. ; Suehle, J. S. / Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states. In: Applied Physics Letters. 2011 ; Vol. 98, No. 23.
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