Spin-Based Complementary Logic Device Using Datta-Das Transistors

Hyun Cheol Koo, Inhwa Jung, Chulwoo Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The spin-FET has been realized using a semiconductor channel, but two complementary transistors analogous to n-and p-type of the conventional charge transistors have not yet been developed. We propose a complementary logic device consisting of two types of devices, namely, parallel and antiparallel spin transistors, in which the alignments of the magnetization directions of the source and the drain electrodes are parallel or antiparallel, respectively. Only one of the two transistors is conducting at a given gate voltage. An assessment of the feasibility was carried out by performing logic gate simulations based on the experimental spin transistor parameters.

Original languageEnglish
Article number7166301
Pages (from-to)3056-3060
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume62
Issue number9
DOIs
Publication statusPublished - 2015 Sep 1

Fingerprint

Logic devices
Transistors
Logic gates
Field effect transistors
Magnetization
Semiconductor materials
Electrodes
Electric potential

Keywords

  • FET logic devices
  • magnetoresistance
  • spin-FET
  • Spin-polarized transport.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Spin-Based Complementary Logic Device Using Datta-Das Transistors. / Koo, Hyun Cheol; Jung, Inhwa; Kim, Chulwoo.

In: IEEE Transactions on Electron Devices, Vol. 62, No. 9, 7166301, 01.09.2015, p. 3056-3060.

Research output: Contribution to journalArticle

Koo, Hyun Cheol ; Jung, Inhwa ; Kim, Chulwoo. / Spin-Based Complementary Logic Device Using Datta-Das Transistors. In: IEEE Transactions on Electron Devices. 2015 ; Vol. 62, No. 9. pp. 3056-3060.
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