Spin Hall effect in an inverted heterostructure

Hyun Cheol Koo, Seon Gu Huh, Jonghwa Eom, Hyunjung Yi, Joonyeon Chang, Suk Hee Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spin-up and -down electrons experience skew scattering in a two-dimensional electron gas layer and two kinds of spin electrons deviate different directions due to the spin dependent deflection. If spin is randomly oriented, the number of scattered electrons on both sides will be same and the Hall voltage will read zero. In this experiment, the carrier concentrations of spin-up and -down are unbalanced because the spin is aligned by stray field from the ferromagnet. Therefore, the voltage probe reads charge accumulation asymmetry. Spin Hall voltage is functions of the spin alignment direction and the amount of spin polarization.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages384-385
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

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Keywords

  • Skew scattering
  • Spin accumulation
  • Spin dependent deflection
  • Spin Hall effect
  • Stray field

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Koo, H. C., Huh, S. G., Eom, J., Yi, H., Chang, J., & Han, S. H. (2006). Spin Hall effect in an inverted heterostructure. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 384-385). [4388778] https://doi.org/10.1109/NMDC.2006.4388778