Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel

Jin Seock Ma, Hyun Cheol Koo, Joonyeon Chang, Hyung Jun Kim, Suk Hee Han, Jonghwa Eom, Chulwoo Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The spin Hall effect is observed for an InAs-based two-dimensional electron gas. Due to the spin Hall effect, the motion of the spin-polarized electrons deviates and causes a charge accumulation at the edge of the InAs channel. A spin imbalance between spin up and down is induced by spin injection from the Pd/CoFe multilayer, which is perpendicularly magnetized. This charge accumulation induces a transverse voltage in the absence of an external magnetic field. The observed spin Hall voltage decreases with increasing temperature and shows the same tendency as the spin diffusion length.

Original languageEnglish
Pages (from-to)1357-1361
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number3
Publication statusPublished - 2008 Sep 1

Fingerprint

Hall effect
electric potential
diffusion length
electron gas
tendencies
injection
causes
magnetic fields
electrons

Keywords

  • Pd/CoFe multilayer
  • Spin Hall effect
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ma, J. S., Koo, H. C., Chang, J., Kim, H. J., Han, S. H., Eom, J., & Kim, C. (2008). Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel. Journal of the Korean Physical Society, 53(3), 1357-1361.

Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel. / Ma, Jin Seock; Koo, Hyun Cheol; Chang, Joonyeon; Kim, Hyung Jun; Han, Suk Hee; Eom, Jonghwa; Kim, Chulwoo.

In: Journal of the Korean Physical Society, Vol. 53, No. 3, 01.09.2008, p. 1357-1361.

Research output: Contribution to journalArticle

Ma, JS, Koo, HC, Chang, J, Kim, HJ, Han, SH, Eom, J & Kim, C 2008, 'Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel', Journal of the Korean Physical Society, vol. 53, no. 3, pp. 1357-1361.
Ma JS, Koo HC, Chang J, Kim HJ, Han SH, Eom J et al. Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel. Journal of the Korean Physical Society. 2008 Sep 1;53(3):1357-1361.
Ma, Jin Seock ; Koo, Hyun Cheol ; Chang, Joonyeon ; Kim, Hyung Jun ; Han, Suk Hee ; Eom, Jonghwa ; Kim, Chulwoo. / Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 3. pp. 1357-1361.
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AU - Han, Suk Hee

AU - Eom, Jonghwa

AU - Kim, Chulwoo

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AB - The spin Hall effect is observed for an InAs-based two-dimensional electron gas. Due to the spin Hall effect, the motion of the spin-polarized electrons deviates and causes a charge accumulation at the edge of the InAs channel. A spin imbalance between spin up and down is induced by spin injection from the Pd/CoFe multilayer, which is perpendicularly magnetized. This charge accumulation induces a transverse voltage in the absence of an external magnetic field. The observed spin Hall voltage decreases with increasing temperature and shows the same tendency as the spin diffusion length.

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