Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates

Yun Suk Yang, Doo Seung Um, Youngsu Lee, JaeKyun Shin, Joonyeon Chang, Hyun Cheol Koo, Hyunhyub Ko, Hyung Jun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300K without mixing with anisotropic magnetoresistance, which is evidently verifi ed by observing a memory effect.

Original languageEnglish
Article number093004
JournalApplied Physics Express
Volume7
Issue number9
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Spin injection and detection in In<sub>0.53</sub>Ga<sub>0.47</sub>As nanomembrane channels transferred onto Si substrates'. Together they form a unique fingerprint.

  • Cite this

    Yang, Y. S., Um, D. S., Lee, Y., Shin, J., Chang, J., Koo, H. C., Ko, H., & Kim, H. J. (2014). Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates. Applied Physics Express, 7(9), [093004]. https://doi.org/10.7567/APEX.7.093004