Spin injection and spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova; M. Izadifard; W. M. Chen; Ji Hyun Kim; F. Ren; G. Thaler; C. R. Abernathy; S. J. Pearton; C. H. Pan; G. H. Chen; J. H. Chyi; J. M. Zavada

doi:10.1063/1.1994637

Spin injection and spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova, M. Izadifard, W. M. Chen, Ji Hyun Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. H. Pan, G. H. Chen, J. H. Chyi, J. M. Zavada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.

Original language	English
Title of host publication	AIP Conference Proceedings
Pages	1399-1400
Number of pages	2
Volume	772
DOIs	https://doi.org/10.1063/1.1994637
Publication status	Published - 2005 Jun 30
Externally published	Yes
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 2004 Jul 26 → 2004 Jul 30

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country	United States
City	Flagstaff, AZ
Period	04/7/26 → 04/7/30

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Buyanova, I. A., Izadifard, M., Chen, W. M., Kim, J. H., Ren, F., Thaler, G., Abernathy, C. R., Pearton, S. J., Pan, C. H., Chen, G. H., Chyi, J. H., & Zavada, J. M. (2005). Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. In AIP Conference Proceedings (Vol. 772, pp. 1399-1400) https://doi.org/10.1063/1.1994637

Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. / Buyanova, I. A.; Izadifard, M.; Chen, W. M.; Kim, Ji Hyun; Ren, F.; Thaler, G.; Abernathy, C. R.; Pearton, S. J.; Pan, C. H.; Chen, G. H.; Chyi, J. H.; Zavada, J. M.

AIP Conference Proceedings. Vol. 772 2005. p. 1399-1400.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Buyanova, IA, Izadifard, M, Chen, WM, Kim, JH, Ren, F, Thaler, G, Abernathy, CR, Pearton, SJ, Pan, CH, Chen, GH, Chyi, JH & Zavada, JM 2005, Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. in AIP Conference Proceedings. vol. 772, pp. 1399-1400, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 04/7/26. https://doi.org/10.1063/1.1994637

@inproceedings{889b6dfd71864ee89a916fd061aff83e,

title = "Spin injection and spin loss in GaMnN/InGaN light-emitting diodes",

abstract = "Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.",

author = "Buyanova, {I. A.} and M. Izadifard and Chen, {W. M.} and Kim, {Ji Hyun} and F. Ren and G. Thaler and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. H.} and Chen, {G. H.} and Chyi, {J. H.} and Zavada, {J. M.}",

year = "2005",

month = jun

day = "30",

doi = "10.1063/1.1994637",

language = "English",

isbn = "0735402574",

volume = "772",

pages = "1399--1400",

booktitle = "AIP Conference Proceedings",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

TY - GEN

T1 - Spin injection and spin loss in GaMnN/InGaN light-emitting diodes

AU - Buyanova, I. A.

AU - Izadifard, M.

AU - Chen, W. M.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Thaler, G.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. H.

AU - Chen, G. H.

AU - Chyi, J. H.

AU - Zavada, J. M.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.

AB - Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.

UR - http://www.scopus.com/inward/record.url?scp=33749460432&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749460432&partnerID=8YFLogxK

U2 - 10.1063/1.1994637

DO - 10.1063/1.1994637

M3 - Conference contribution

AN - SCOPUS:33749460432

SN - 0735402574

SN - 9780735402577

VL - 772

SP - 1399

EP - 1400

BT - AIP Conference Proceedings

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Access to Document

10.1063/1.1994637