Abstract
Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 1399-1400 |
| Number of pages | 2 |
| Volume | 772 |
| DOIs | |
| Publication status | Published - 2005 Jun 30 |
| Externally published | Yes |
| Event | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 2004 Jul 26 → 2004 Jul 30 |
Other
| Other | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 |
|---|---|
| Country | United States |
| City | Flagstaff, AZ |
| Period | 04/7/26 → 04/7/30 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. / Buyanova, I. A.; Izadifard, M.; Chen, W. M.; Kim, Ji Hyun; Ren, F.; Thaler, G.; Abernathy, C. R.; Pearton, S. J.; Pan, C. H.; Chen, G. H.; Chyi, J. H.; Zavada, J. M.
AIP Conference Proceedings. Vol. 772 2005. p. 1399-1400.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Spin injection and spin loss in GaMnN/InGaN light-emitting diodes
AU - Buyanova, I. A.
AU - Izadifard, M.
AU - Chen, W. M.
AU - Kim, Ji Hyun
AU - Ren, F.
AU - Thaler, G.
AU - Abernathy, C. R.
AU - Pearton, S. J.
AU - Pan, C. H.
AU - Chen, G. H.
AU - Chyi, J. H.
AU - Zavada, J. M.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.
AB - Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.
UR - http://www.scopus.com/inward/record.url?scp=33749460432&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749460432&partnerID=8YFLogxK
U2 - 10.1063/1.1994637
DO - 10.1063/1.1994637
M3 - Conference contribution
SN - 0735402574
SN - 9780735402577
VL - 772
SP - 1399
EP - 1400
BT - AIP Conference Proceedings
ER -