Spin injection and spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova, M. Izadifard, W. M. Chen, Ji Hyun Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. H. Pan, G. H. Chen, J. H. Chyi, J. M. Zavada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages1399-1400
Number of pages2
Volume772
DOIs
Publication statusPublished - 2005 Jun 30
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

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light emitting diodes
injection
detectors
optical polarization
injectors

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Buyanova, I. A., Izadifard, M., Chen, W. M., Kim, J. H., Ren, F., Thaler, G., ... Zavada, J. M. (2005). Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. In AIP Conference Proceedings (Vol. 772, pp. 1399-1400) https://doi.org/10.1063/1.1994637

Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. / Buyanova, I. A.; Izadifard, M.; Chen, W. M.; Kim, Ji Hyun; Ren, F.; Thaler, G.; Abernathy, C. R.; Pearton, S. J.; Pan, C. H.; Chen, G. H.; Chyi, J. H.; Zavada, J. M.

AIP Conference Proceedings. Vol. 772 2005. p. 1399-1400.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Buyanova, IA, Izadifard, M, Chen, WM, Kim, JH, Ren, F, Thaler, G, Abernathy, CR, Pearton, SJ, Pan, CH, Chen, GH, Chyi, JH & Zavada, JM 2005, Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. in AIP Conference Proceedings. vol. 772, pp. 1399-1400, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 04/7/26. https://doi.org/10.1063/1.1994637
Buyanova IA, Izadifard M, Chen WM, Kim JH, Ren F, Thaler G et al. Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. In AIP Conference Proceedings. Vol. 772. 2005. p. 1399-1400 https://doi.org/10.1063/1.1994637
Buyanova, I. A. ; Izadifard, M. ; Chen, W. M. ; Kim, Ji Hyun ; Ren, F. ; Thaler, G. ; Abernathy, C. R. ; Pearton, S. J. ; Pan, C. H. ; Chen, G. H. ; Chyi, J. H. ; Zavada, J. M. / Spin injection and spin loss in GaMnN/InGaN light-emitting diodes. AIP Conference Proceedings. Vol. 772 2005. pp. 1399-1400
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title = "Spin injection and spin loss in GaMnN/InGaN light-emitting diodes",
abstract = "Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5{\%}) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.",
author = "Buyanova, {I. A.} and M. Izadifard and Chen, {W. M.} and Kim, {Ji Hyun} and F. Ren and G. Thaler and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. H.} and Chen, {G. H.} and Chyi, {J. H.} and Zavada, {J. M.}",
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AU - Buyanova, I. A.

AU - Izadifard, M.

AU - Chen, W. M.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Thaler, G.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. H.

AU - Chen, G. H.

AU - Chyi, J. H.

AU - Zavada, J. M.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.

AB - Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.

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