Spin injection in an FeCo/Si/FeCo structure: A spin transistor

H. J. Lee, U. J. Hwang, S. J. Cho, Y. M. Kim, J. Y. Chang, Y. J. Park, S. H. Han, Young-geun Kim, M. W. Shin, W. Y. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO 2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

Original languageEnglish
Title of host publicationDigests of the Intermag Conference
Publication statusPublished - 2003
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3


OtherIntermag 2003: International Magnetics Conference
CountryUnited States
CityBoston, MA


ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lee, H. J., Hwang, U. J., Cho, S. J., Kim, Y. M., Chang, J. Y., Park, Y. J., Han, S. H., Kim, Y., Shin, M. W., & Lee, W. Y. (2003). Spin injection in an FeCo/Si/FeCo structure: A spin transistor. In Digests of the Intermag Conference