Spin injection in an FeCo/Si/FeCo structure: A spin transistor

H. J. Lee, U. J. Hwang, S. J. Cho, Y. M. Kim, J. Y. Chang, Y. J. Park, S. H. Han, Y. K. Kim, M. W. Shin, W. Y. Lee

Research output: Contribution to journalConference articlepeer-review

Abstract

The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

Original languageEnglish
Pages (from-to)CD09
JournalDigests of the Intermag Conference
Publication statusPublished - 2003
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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