Spin injection in an FeCo/Si/FeCo structure: A spin transistor

H. J. Lee; U. J. Hwang; S. J. Cho; Y. M. Kim; J. Y. Chang; Y. J. Park; S. H. Han; Y. K. Kim; M. W. Shin; W. Y. Lee

Spin injection in an FeCo/Si/FeCo structure: A spin transistor

H. J. Lee, U. J. Hwang, S. J. Cho, Y. M. Kim, J. Y. Chang, Y. J. Park, S. H. Han, Y. K. Kim, M. W. Shin, W. Y. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO₂ top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

Original language	English
Pages (from-to)	CD09
Journal	Digests of the Intermag Conference
Publication status	Published - 2003
Event	Intermag 2003: International Magnetics Conference - Boston, MA, United States Duration: 2003 Mar 28 → 2003 Apr 3

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{3c8594d0bebb47dd97d3f06426ce4893,

title = "Spin injection in an FeCo/Si/FeCo structure: A spin transistor",

abstract = "The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 {\AA} thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.",

author = "Lee, {H. J.} and Hwang, {U. J.} and Cho, {S. J.} and Kim, {Y. M.} and Chang, {J. Y.} and Park, {Y. J.} and Han, {S. H.} and Kim, {Y. K.} and Shin, {M. W.} and Lee, {W. Y.}",

year = "2003",

language = "English",

pages = "CD09",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Intermag 2003: International Magnetics Conference ; Conference date: 28-03-2003 Through 03-04-2003",

}

TY - JOUR

T1 - Spin injection in an FeCo/Si/FeCo structure

T2 - Intermag 2003: International Magnetics Conference

AU - Lee, H. J.

AU - Hwang, U. J.

AU - Cho, S. J.

AU - Kim, Y. M.

AU - Chang, J. Y.

AU - Park, Y. J.

AU - Han, S. H.

AU - Kim, Y. K.

AU - Shin, M. W.

AU - Lee, W. Y.

PY - 2003

Y1 - 2003

N2 - The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

AB - The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

UR - http://www.scopus.com/inward/record.url?scp=0141679674&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0141679674

SN - 0074-6843

SP - CD09

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

Y2 - 28 March 2003 through 3 April 2003

ER -

Spin injection in an FeCo/Si/FeCo structure: A spin transistor

Abstract

ASJC Scopus subject areas

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