The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.
ASJC Scopus subject areas
- Electrical and Electronic Engineering