Spin injection in an FeCo/Si/FeCo structure: A spin transistor

H. J. Lee, U. J. Hwang, S. J. Cho, Y. M. Kim, J. Y. Chang, Y. J. Park, S. H. Han, Young-geun Kim, M. W. Shin, W. Y. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO 2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

Original languageEnglish
Title of host publicationDigests of the Intermag Conference
Publication statusPublished - 2003
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

Other

OtherIntermag 2003: International Magnetics Conference
CountryUnited States
CityBoston, MA
Period03/3/2803/4/3

Fingerprint

Ferromagnetic materials
Transistors
Electron tubes
Oxidation
Electrons
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lee, H. J., Hwang, U. J., Cho, S. J., Kim, Y. M., Chang, J. Y., Park, Y. J., ... Lee, W. Y. (2003). Spin injection in an FeCo/Si/FeCo structure: A spin transistor. In Digests of the Intermag Conference

Spin injection in an FeCo/Si/FeCo structure : A spin transistor. / Lee, H. J.; Hwang, U. J.; Cho, S. J.; Kim, Y. M.; Chang, J. Y.; Park, Y. J.; Han, S. H.; Kim, Young-geun; Shin, M. W.; Lee, W. Y.

Digests of the Intermag Conference. 2003.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, HJ, Hwang, UJ, Cho, SJ, Kim, YM, Chang, JY, Park, YJ, Han, SH, Kim, Y, Shin, MW & Lee, WY 2003, Spin injection in an FeCo/Si/FeCo structure: A spin transistor. in Digests of the Intermag Conference. Intermag 2003: International Magnetics Conference, Boston, MA, United States, 03/3/28.
Lee HJ, Hwang UJ, Cho SJ, Kim YM, Chang JY, Park YJ et al. Spin injection in an FeCo/Si/FeCo structure: A spin transistor. In Digests of the Intermag Conference. 2003
Lee, H. J. ; Hwang, U. J. ; Cho, S. J. ; Kim, Y. M. ; Chang, J. Y. ; Park, Y. J. ; Han, S. H. ; Kim, Young-geun ; Shin, M. W. ; Lee, W. Y. / Spin injection in an FeCo/Si/FeCo structure : A spin transistor. Digests of the Intermag Conference. 2003.
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abstract = "The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 {\AA} thick SiO 2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.",
author = "Lee, {H. J.} and Hwang, {U. J.} and Cho, {S. J.} and Kim, {Y. M.} and Chang, {J. Y.} and Park, {Y. J.} and Han, {S. H.} and Young-geun Kim and Shin, {M. W.} and Lee, {W. Y.}",
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T2 - A spin transistor

AU - Lee, H. J.

AU - Hwang, U. J.

AU - Cho, S. J.

AU - Kim, Y. M.

AU - Chang, J. Y.

AU - Park, Y. J.

AU - Han, S. H.

AU - Kim, Young-geun

AU - Shin, M. W.

AU - Lee, W. Y.

PY - 2003

Y1 - 2003

N2 - The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO 2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

AB - The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO 2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

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AN - SCOPUS:0141679674

BT - Digests of the Intermag Conference

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