The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.
|Journal||Digests of the Intermag Conference|
|Publication status||Published - 2003|
|Event||Intermag 2003: International Magnetics Conference - Boston, MA, United States|
Duration: 2003 Mar 28 → 2003 Apr 3
ASJC Scopus subject areas
- Electrical and Electronic Engineering