Spin injection in an FeCo/Si/FeCo structure: A spin transistor

H. J. Lee, U. J. Hwang, S. J. Cho, Y. M. Kim, J. Y. Chang, Y. J. Park, S. H. Han, Young-geun Kim, M. W. Shin, W. Y. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this article, we report the spin-valve effect in a lateral spin-injection device with an FM/Si/FM structure.

Original languageEnglish
Title of host publicationIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780376471, 9780780376472
DOIs
Publication statusPublished - 2003 Jan 1
Event2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States
Duration: 2003 Mar 30 → 2003 Apr 3

Other

Other2003 IEEE International Magnetics Conference, Intermag 2003
CountryUnited States
CityBoston
Period03/3/30 → 03/4/3

Keywords

  • Electron beams
  • Electron optics
  • Intelligent networks
  • Lithography
  • Magnetic fields
  • Magnetic switching
  • Spin polarized transport
  • Sputter etching
  • Temperature dependence
  • Temperature distribution

ASJC Scopus subject areas

  • Engineering(all)

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    Lee, H. J., Hwang, U. J., Cho, S. J., Kim, Y. M., Chang, J. Y., Park, Y. J., Han, S. H., Kim, Y., Shin, M. W., & Lee, W. Y. (2003). Spin injection in an FeCo/Si/FeCo structure: A spin transistor. In Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference [1230338] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2003.1230338