Spin-orbit coupling in double-sided doped InAs quantum well structures

Kyung Ho Kim, Hyung Jun Kim, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We have investigated Rashba spin-orbit interaction [Bychkov and Rashba, JETP Lett. 39, 78 (1984)] parameter (α) in double-sided doped InAs quantum well structures of different potential asymmetries created by introducing two separated carrier supply layers. The internal potential asymmetry is manipulated between negative and positive potential gradient by adjusting the relative doping concentrations of the two carrier supply layers. The larger potential asymmetry results in the more extensive variation in α with respect to gate electric field (Vg). The structures of the negative and positive potential gradients exhibit the opposite variation in α with respect to Vg which evidently supports the fact that the sign of α can be changed by the reversed potential asymmetry.

Original languageEnglish
Article number012504
JournalApplied Physics Letters
Volume97
Issue number1
DOIs
Publication statusPublished - 2010 Jul 5
Externally publishedYes

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asymmetry
quantum wells
orbits
potential gradients
spin-orbit interactions
adjusting
electric fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, K. H., Kim, H. J., Koo, H. C., Chang, J., & Han, S. H. (2010). Spin-orbit coupling in double-sided doped InAs quantum well structures. Applied Physics Letters, 97(1), [012504]. https://doi.org/10.1063/1.3462325

Spin-orbit coupling in double-sided doped InAs quantum well structures. / Kim, Kyung Ho; Kim, Hyung Jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee.

In: Applied Physics Letters, Vol. 97, No. 1, 012504, 05.07.2010.

Research output: Contribution to journalArticle

Kim, Kyung Ho ; Kim, Hyung Jun ; Koo, Hyun Cheol ; Chang, Joonyeon ; Han, Suk Hee. / Spin-orbit coupling in double-sided doped InAs quantum well structures. In: Applied Physics Letters. 2010 ; Vol. 97, No. 1.
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