Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

Sang Hoon Lee, Sangyeop Lee, Seul Ki Bac, Seonghoon Choi, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticle

Abstract

Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.

Original languageEnglish
Article number2400206
JournalIEEE Transactions on Magnetics
Volume55
Issue number2
DOIs
Publication statusPublished - 2019 Feb 1

Fingerprint

Orbits
Semiconductor materials
Magnetic fields
Magnetization reversal
Joule heating
Magnetic anisotropy
Hall effect
Magnetization
Crystalline materials
Direction compound

Keywords

  • Crystalline ferromagnetic films
  • magnetic anisotropy
  • planar Hall effect (PHE)
  • spin-orbit-induced (SOI) field

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor. / Lee, Sang Hoon; Lee, Sangyeop; Bac, Seul Ki; Choi, Seonghoon; Liu, Xinyu; Dobrowolska, M.; Furdyna, Jacek K.

In: IEEE Transactions on Magnetics, Vol. 55, No. 2, 2400206, 01.02.2019.

Research output: Contribution to journalArticle

Lee, Sang Hoon ; Lee, Sangyeop ; Bac, Seul Ki ; Choi, Seonghoon ; Liu, Xinyu ; Dobrowolska, M. ; Furdyna, Jacek K. / Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor. In: IEEE Transactions on Magnetics. 2019 ; Vol. 55, No. 2.
@article{96e556c37c4841a59acf2ad10f9a9139,
title = "Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor",
abstract = "Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.",
keywords = "Crystalline ferromagnetic films, magnetic anisotropy, planar Hall effect (PHE), spin-orbit-induced (SOI) field",
author = "Lee, {Sang Hoon} and Sangyeop Lee and Bac, {Seul Ki} and Seonghoon Choi and Xinyu Liu and M. Dobrowolska and Furdyna, {Jacek K.}",
year = "2019",
month = "2",
day = "1",
doi = "10.1109/TMAG.2018.2862867",
language = "English",
volume = "55",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

AU - Lee, Sang Hoon

AU - Lee, Sangyeop

AU - Bac, Seul Ki

AU - Choi, Seonghoon

AU - Liu, Xinyu

AU - Dobrowolska, M.

AU - Furdyna, Jacek K.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.

AB - Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.

KW - Crystalline ferromagnetic films

KW - magnetic anisotropy

KW - planar Hall effect (PHE)

KW - spin-orbit-induced (SOI) field

UR - http://www.scopus.com/inward/record.url?scp=85055041048&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055041048&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2018.2862867

DO - 10.1109/TMAG.2018.2862867

M3 - Article

VL - 55

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 2

M1 - 2400206

ER -