Abstract
We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.
| Original language | English |
|---|---|
| Pages (from-to) | 4538-4541 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 244 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field. / Lee, J.; Back, J.; Joo, S.; Hong, J.; Rhie, K.; Kim, Kihyun; Kim, S. U.; Lee, B. C.; Kim, T.; Shin, K.
In: Physica Status Solidi (B) Basic Research, Vol. 244, No. 12, 01.12.2007, p. 4538-4541.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field
AU - Lee, J.
AU - Back, J.
AU - Joo, S.
AU - Hong, J.
AU - Rhie, K.
AU - Kim, Kihyun
AU - Kim, S. U.
AU - Lee, B. C.
AU - Kim, T.
AU - Shin, K.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.
AB - We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.
UR - http://www.scopus.com/inward/record.url?scp=38049098207&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38049098207&partnerID=8YFLogxK
U2 - 10.1002/pssb.200777129
DO - 10.1002/pssb.200777129
M3 - Article
VL - 244
SP - 4538
EP - 4541
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 12
ER -