Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

J. Lee; J. Back; S. Joo; J. Hong; K. Rhie; K. H. Kim; S. U. Kim; B. C. Lee; T. Kim; K. Shin

doi:10.1002/pssb.200777129

Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

J. Lee, J. Back, S. Joo, J. Hong, K. Rhie, K. H. Kim, S. U. Kim, B. C. Lee, T. Kim, K. Shin

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.

Original language	English
Pages (from-to)	4538-4541
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200777129
Publication status	Published - 2007 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{4e579c8c16214999a1ce6a26313c8707,

title = "Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field",

abstract = "We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.",

author = "J. Lee and J. Back and S. Joo and J. Hong and K. Rhie and Kim, {K. H.} and Kim, {S. U.} and Lee, {B. C.} and T. Kim and K. Shin",

year = "2007",

month = dec,

doi = "10.1002/pssb.200777129",

language = "English",

volume = "244",

pages = "4538--4541",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "12",

}

TY - JOUR

T1 - Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

AU - Lee, J.

AU - Back, J.

AU - Joo, S.

AU - Hong, J.

AU - Rhie, K.

AU - Kim, K. H.

AU - Kim, S. U.

AU - Lee, B. C.

AU - Kim, T.

AU - Shin, K.

PY - 2007/12

Y1 - 2007/12

N2 - We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.

AB - We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=38049098207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38049098207&partnerID=8YFLogxK

U2 - 10.1002/pssb.200777129

DO - 10.1002/pssb.200777129

M3 - Article

AN - SCOPUS:38049098207

VL - 244

SP - 4538

EP - 4541

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 12

ER -