Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

J. Lee; J. Back; S. Joo; J. Hong; K. Rhie; Kihyun Kim; S. U. Kim; B. C. Lee; T. Kim; K. Shin

doi:10.1002/pssb.200777129

Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

J. Lee, J. Back, S. Joo, J. Hong, K. Rhie, Kihyun Kim, S. U. Kim, B. C. Lee, T. Kim, K. Shin

School of Health and Environmental Science

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.

Original language	English
Pages (from-to)	4538-4541
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200777129
Publication status	Published - 2007 Dec 1

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Lee, J., Back, J., Joo, S., Hong, J., Rhie, K., Kim, K., Kim, S. U., Lee, B. C., Kim, T., & Shin, K. (2007). Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field. Physica Status Solidi (B) Basic Research, 244(12), 4538-4541. https://doi.org/10.1002/pssb.200777129

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abstract = "We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.",

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AU - Back, J.

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AU - Hong, J.

AU - Rhie, K.

AU - Kim, Kihyun

AU - Kim, S. U.

AU - Lee, B. C.

AU - Kim, T.

AU - Shin, K.

PY - 2007/12/1

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N2 - We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.

AB - We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.

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10.1002/pssb.200777129