Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

J. Lee, J. Back, S. Joo, J. Hong, K. Rhie, Kihyun Kim, S. U. Kim, B. C. Lee, T. Kim, K. Shin

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Abstract

We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor.

Original languageEnglish
Pages (from-to)4538-4541
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lee, J., Back, J., Joo, S., Hong, J., Rhie, K., Kim, K., Kim, S. U., Lee, B. C., Kim, T., & Shin, K. (2007). Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field. Physica Status Solidi (B) Basic Research, 244(12), 4538-4541. https://doi.org/10.1002/pssb.200777129