Spin transport in a lateral spin-injection device with an FM/Si/FM junction

W. J. Hwang, H. J. Lee, K. I. Lee, Y. M. Kim, J. Y. Chang, S. H. Han, M. W. Shin, Young-geun Kim, W. Y. Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.

Original languageEnglish
Pages (from-to)1915-1916
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberIII
DOIs
Publication statusPublished - 2004 May 1

Keywords

  • Hybrid ferromagnetic metal/semiconductor
  • Spin injection
  • Spin-polarized transport

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Hwang, W. J., Lee, H. J., Lee, K. I., Kim, Y. M., Chang, J. Y., Han, S. H., Shin, M. W., Kim, Y., & Lee, W. Y. (2004). Spin transport in a lateral spin-injection device with an FM/Si/FM junction. Journal of Magnetism and Magnetic Materials, 272-276(III), 1915-1916. https://doi.org/10.1016/j.jmmm.2003.12.1169