Spin transport in a submicron-sized structure using Vanadium metal masks

Dong Seok Han, Hyun Cheol Koo, Sol Lee, Joonyeon Chang, Suk Hee Han, Eun Kyu Kim, Jonghwa Eom

Research output: Contribution to journalArticle

Abstract

A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a AR of 4 mω is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.

Original languageEnglish
Pages (from-to)207-211
Number of pages5
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul

Keywords

  • Spin accumulation
  • Spin diffusion
  • Two-dimensional electron gas
  • Vanadium metal mask

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Han, D. S., Koo, H. C., Lee, S., Chang, J., Han, S. H., Kim, E. K., & Eom, J. (2009). Spin transport in a submicron-sized structure using Vanadium metal masks. Journal of the Korean Physical Society, 55(1), 207-211. https://doi.org/10.3938/jkps.55.207