Spin-valve effect in an FM/Si/FM junction

K. I. Lee, H. J. Lee, J. Y. Chang, S. H. Han, Young-geun Kim, Woo Young Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)


The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Original languageEnglish
Pages (from-to)131-133
Number of pages3
JournalJournal of Materials Science: Materials in Electronics
Issue number3
Publication statusPublished - 2005 Mar 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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