Spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films

T. W. Kim, S. H. Lim, R. J. Gambino

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated to seek a possibility of practical applications of these thin films. The resistivity of Tb-Fe thin films ranges from 180 to 250 μΩ cm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from -7.3 to -5.0 μΩ cm in the same composition range, giving the normalized resistivity ratio from -4.1% to -2.0%. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 μΩ cm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 μΩ cm in the same composition range, giving the normalized resistivity ratio from 4.8% to 1.7%. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a low magnetic field.

Original languageEnglish
Pages (from-to)7212-7214
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number11 II
DOIs
Publication statusPublished - 2001 Jun 1
Externally publishedYes
Event8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States
Duration: 2001 Jan 72001 Jan 11

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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