Stability and dynamics of surface vacancies on GaAs(110)

Jae Yel Yi, Jeong Sook Ha, Seong Ju Park, El Hang Lee

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.

Original languageEnglish
Pages (from-to)11198-11200
Number of pages3
JournalPhysical Review B
Volume51
Issue number16
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

Fingerprint

Vacancies
Atoms
Dimers
atoms
Evaporation
dimers
evaporation
energy
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Stability and dynamics of surface vacancies on GaAs(110). / Yi, Jae Yel; Ha, Jeong Sook; Park, Seong Ju; Lee, El Hang.

In: Physical Review B, Vol. 51, No. 16, 01.12.1995, p. 11198-11200.

Research output: Contribution to journalArticle

Yi, Jae Yel ; Ha, Jeong Sook ; Park, Seong Ju ; Lee, El Hang. / Stability and dynamics of surface vacancies on GaAs(110). In: Physical Review B. 1995 ; Vol. 51, No. 16. pp. 11198-11200.
@article{73ed0433e87e49a59b01c05880d71f4e,
title = "Stability and dynamics of surface vacancies on GaAs(110)",
abstract = "Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.",
author = "Yi, {Jae Yel} and Ha, {Jeong Sook} and Park, {Seong Ju} and Lee, {El Hang}",
year = "1995",
month = "12",
day = "1",
doi = "10.1103/PhysRevB.51.11198",
language = "English",
volume = "51",
pages = "11198--11200",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Stability and dynamics of surface vacancies on GaAs(110)

AU - Yi, Jae Yel

AU - Ha, Jeong Sook

AU - Park, Seong Ju

AU - Lee, El Hang

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.

AB - Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.

UR - http://www.scopus.com/inward/record.url?scp=0000832082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000832082&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.51.11198

DO - 10.1103/PhysRevB.51.11198

M3 - Article

VL - 51

SP - 11198

EP - 11200

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 16

ER -