Stability and dynamics of surface vacancies on GaAs(110)

Jae Yel Yi; Jeong Sook Ha; Seong Ju Park; El Hang Lee

doi:10.1103/PhysRevB.51.11198

Stability and dynamics of surface vacancies on GaAs(110)

Jae Yel Yi, Jeong Sook Ha, Seong Ju Park, El Hang Lee

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.

Original language	English
Pages (from-to)	11198-11200
Number of pages	3
Journal	Physical Review B
Volume	51
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.51.11198
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1103/PhysRevB.51.11198

Fingerprint Dive into the research topics of 'Stability and dynamics of surface vacancies on GaAs(110)'. Together they form a unique fingerprint.

Cite this

@article{73ed0433e87e49a59b01c05880d71f4e,

title = "Stability and dynamics of surface vacancies on GaAs(110)",

abstract = "Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.",

author = "Yi, {Jae Yel} and Ha, {Jeong Sook} and Park, {Seong Ju} and Lee, {El Hang}",

year = "1995",

doi = "10.1103/PhysRevB.51.11198",

language = "English",

volume = "51",

pages = "11198--11200",

journal = "Physical Review B",

issn = "0163-1829",

number = "16",

}

TY - JOUR

T1 - Stability and dynamics of surface vacancies on GaAs(110)

AU - Yi, Jae Yel

AU - Ha, Jeong Sook

AU - Park, Seong Ju

AU - Lee, El Hang

PY - 1995

Y1 - 1995

N2 - Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.

AB - Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.

UR - http://www.scopus.com/inward/record.url?scp=0000832082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000832082&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.51.11198

DO - 10.1103/PhysRevB.51.11198

M3 - Article

AN - SCOPUS:0000832082

VL - 51

SP - 11198

EP - 11200

JO - Physical Review B

JF - Physical Review B

SN - 0163-1829

IS - 16

ER -