Stability and dynamics of surface vacancies on GaAs(110)

Jae Yel Yi, Jeong Sook Ha, Seong Ju Park, El Hang Lee

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20 Citations (Scopus)

Abstract

Ab initio total-energy calculations have been performed for the energetics and diffusion of surface vacancies on GaAs(110). The energies required to evaporate a Ga atom, an As atom, and a GaAs dimer are 4.9, 5.4, and 6.5 eV, respectively, in the neutral state. After evaporations, relaxations of the surface are substantial. The vacancies favor negatively charged states. The diffusion of the vacancies was examined by calculating the potential-barrier heights.

Original languageEnglish
Pages (from-to)11198-11200
Number of pages3
JournalPhysical Review B
Volume51
Issue number16
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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