Stability of group IV-VI semiconductor alloys

L. Salamanca-Young, S. Nahm, M. Wuttig, D. L. Partin, J. Heremans

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We present transmission electron microscopy results on Pb1-xEuxTe alloys that show evidence for a compositional instability for x0.5 when the alloys are grown on BaF2 substrates. The Pb1-xEuxTe alloy becomes stable at room temperature if a buffer layer of PbTe is grown on the BaF2 substrate prior to the growth of the Pb1-xEuxTe layer. The stabilization of the Pb1-xEuxTe solid solution is the result of the additional energy term due to the strain between the Pb1-xEuxTe film and the PbTe buffer layer. The estimated critical temperatures for decomposition of the Pb1-xEuxTe alloys with and without the PbTe buffer layer are 0 and 366 K, respectively, in accord with the experimental observations.

Original languageEnglish
Pages (from-to)10995-11000
Number of pages6
JournalPhysical Review B
Issue number15
Publication statusPublished - 1989

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Salamanca-Young, L., Nahm, S., Wuttig, M., Partin, D. L., & Heremans, J. (1989). Stability of group IV-VI semiconductor alloys. Physical Review B, 39(15), 10995-11000.