Stability of group IV-VI semiconductor alloys

L. Salamanca-Young, Sahn Nahm, M. Wuttig, D. L. Partin, J. Heremans

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present transmission electron microscopy results on Pb1-xEuxTe alloys that show evidence for a compositional instability for x0.5 when the alloys are grown on BaF2 substrates. The Pb1-xEuxTe alloy becomes stable at room temperature if a buffer layer of PbTe is grown on the BaF2 substrate prior to the growth of the Pb1-xEuxTe layer. The stabilization of the Pb1-xEuxTe solid solution is the result of the additional energy term due to the strain between the Pb1-xEuxTe film and the PbTe buffer layer. The estimated critical temperatures for decomposition of the Pb1-xEuxTe alloys with and without the PbTe buffer layer are 0 and 366 K, respectively, in accord with the experimental observations.

Original languageEnglish
Pages (from-to)10995-11000
Number of pages6
JournalPhysical Review B
Volume39
Issue number15
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

Fingerprint

Buffer layers
buffers
Substrates
Solid solutions
critical temperature
solid solutions
Stabilization
stabilization
Transmission electron microscopy
Decomposition
decomposition
Temperature
transmission electron microscopy
IV-VI semiconductors
room temperature
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Salamanca-Young, L., Nahm, S., Wuttig, M., Partin, D. L., & Heremans, J. (1989). Stability of group IV-VI semiconductor alloys. Physical Review B, 39(15), 10995-11000. https://doi.org/10.1103/PhysRevB.39.10995

Stability of group IV-VI semiconductor alloys. / Salamanca-Young, L.; Nahm, Sahn; Wuttig, M.; Partin, D. L.; Heremans, J.

In: Physical Review B, Vol. 39, No. 15, 01.12.1989, p. 10995-11000.

Research output: Contribution to journalArticle

Salamanca-Young, L, Nahm, S, Wuttig, M, Partin, DL & Heremans, J 1989, 'Stability of group IV-VI semiconductor alloys', Physical Review B, vol. 39, no. 15, pp. 10995-11000. https://doi.org/10.1103/PhysRevB.39.10995
Salamanca-Young L, Nahm S, Wuttig M, Partin DL, Heremans J. Stability of group IV-VI semiconductor alloys. Physical Review B. 1989 Dec 1;39(15):10995-11000. https://doi.org/10.1103/PhysRevB.39.10995
Salamanca-Young, L. ; Nahm, Sahn ; Wuttig, M. ; Partin, D. L. ; Heremans, J. / Stability of group IV-VI semiconductor alloys. In: Physical Review B. 1989 ; Vol. 39, No. 15. pp. 10995-11000.
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